丝印：TFS070N03N；Package：DFN5060-8L；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The TFS070N03N uses advanced trench technology to provi de excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other switching application. General Feature VDS =30V , ID =30A RDS(ON)

文件：4.07506 Mbytes 页数：6 Pages

TUOFENG

拓锋半导体

Excellent Resistance to damage from static electricity

文件：41.25 Kbytes 页数：4 Pages

ROHM

罗姆

4V Drive Nch MOSFET

文件：1.13228 Mbytes 页数：7 Pages

ROHM

罗姆

SMD

TDK/东电化

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OSC

NA

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