首页 >TFMCJ100A-W>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
MonolithicConstructionWithBuiltInBase-EmitterShuntResistors MonolithicConstructionWithBuiltInBase-EmitterShuntResistors -HighDCCurrentGain:hFE=1000@VCE=4V,IC=3A(Min.) -Collector-EmitterSustainingVoltage -LowCollector-EmitterSaturationVoltage -IndustrialUse -ComplementarytoTIP105/106/107 | SEMIHOW SemiHow Co.,Ltd. | SEMIHOW | ||
DarlingtonPowerTransistors(NPN) DarlingtonPowerTransistors(NPN) Features •Designedforgeneral-purposeamplifierandlowspeedswitchingapplications •RoHSCompliant | TAITRON TAITRON | TAITRON | ||
SILICONDARLINGTONPOWERTRANSISTORS NPNepitaxial-basetransistorsinamonolithicDalringtoncircuitandhousedinaTO-220enveloppe.Theyaredesignedforgeneralpurposeamplifierandlow-speedswitchingapplications. PNPcomplementsareTIP105-106-107 CompliancetoRoHS. | COMSET Comset Semiconductor | COMSET | ||
SiliconNPNDarlingtonPowerTransistors | SAVANTIC Savantic, Inc. | SAVANTIC | ||
NPNPlasticMedium-PowerSiliconTransistors | MCCMicro Commercial Components 美微科美微科半导体公司 | MCC | ||
PLASTICPOWERTRANSISTORS PLASTICPOWERTRANSISTORS IntendedforuseinLinearSwitchingApplications | CDIL CDIL | CDIL | ||
PLASTICMEDIUM-POWERCOPLEMENTARYSILICONTRANSISTORS 8AmpereDARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS60-100VOLTS80WATTS TIP100,TIP101,TIP102-->NPN TIP105,TIP106,TIP107-->PNP | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
SiliconNPNDarlingtonPowerTransistors DESCRIPTION ·WithTO-220Cpackage ·DARLINGTON ·HighDCcurrentgain ·Lowcollectorsaturationvoltage ·ComplementtotypeTIP105/106/107 APPLICATIONS ·Forindustrialuse | SAVANTIC Savantic, Inc. | SAVANTIC | ||
iscSiliconNPNDarlingtonPowerTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
NPNPlasticMedium-PowerSiliconTransistors Features •MountingTorgue:5in-lbsMaximum •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •HighDCCurrentGain:hFE=2500(Typ)@IC=4.0Adc •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LowCollector-EmitterSaturati | MCCMicro Commercial Components 美微科美微科半导体公司 | MCC | ||
NPNPlasticMedium-PowerSiliconTransistors | MCCMicro Commercial Components 美微科美微科半导体公司 | MCC | ||
PLASTICPOWERTRANSISTORS PLASTICPOWERTRANSISTORS IntendedforuseinLinearSwitchingApplications | TEL TRANSYS Electronics Limited | TEL | ||
PlasticMedium?뭁owerComplementarySiliconTransistors | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •HighDCCurrentGain:hFE=1000@Vce=4V,Ic=3A(Min.) •Collector-EmitterSustainingVoltage •LowCollector-EmitterSaturationVoltage •IndustrialUse •ComplementarytoTIP105/106/107 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
PowerDarlingtonsforLinearandSwitchingApplications TIP100,101,102NPNPLASTICPOWERTRANSISTORS TIP105,106,107PNPPLASTICPOWERTRANSISTORS PowerDarlingtonsforLinearandSwitchingApplications | bocaBoca semiconductor corporation 博卡博卡半导体公司 | boca | ||
POWERTRANSISTORS(8A,60-100V,80W) 8AmpereDARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS60-100VOLTS80WATTS TIP100,TIP101,TIP102-->NPN TIP105,TIP106,TIP107-->PNP | MOSPEC MOSPEC | MOSPEC | ||
DARLINGTON8AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS DARLINGTON8AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60–80–100VOLTS 80WATTS ...designedforgeneral–purposeamplifierandlow–speedswitchingapplications. •HighDCCurrentGain—hFE=2500(Typ)@IC=4.0Adc •Collector–EmitterSustainingVoltage—@30mAdc | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
DARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS PlasticMedium−PowerComplementarySiliconTransistors Designedforgeneral−purposeamplifierandlow−speedswitchingapplications. Features •HighDCCurrentGain−hFE=2500(Typ)@IC=4.0Adc •Collector−EmitterSustainingVoltage−@30mAdc VCEO(sus)=60Vdc(Min)− | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
NPNSILICONPOWERDARLINGTONS ●DesignedforComplementaryUsewithTIP105,TIP106andTIP107 ●80Wat25°CCaseTemperature ●8AContinuousCollectorCurrent ●MaximumVCE(sat)of2.5VatIC=8A | POINNPower Innovations Ltd Power Innovations Ltd | POINN | ||
NPNPlasticMedium-PowerSiliconTransistors Features •MountingTorgue:5in-lbsMaximum •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •HighDCCurrentGain:hFE=2500(Typ)@IC=4.0Adc •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LowCollector-EmitterSaturati | MCCMicro Commercial Components 美微科美微科半导体公司 | MCC |
详细参数
- 型号：
TFMCJ100A-W
- 功能描述：
TVS 二极管 - 瞬态电压抑制器 5%
- RoHS：
否
- 制造商：
Vishay Semiconductors
- 极性：
Bidirectional
- 击穿电压：
58.9 V
- 钳位电压：
77.4 V
- 峰值浪涌电流：
38.8 A
- 封装/箱体：
DO-214AB
- 最小工作温度：
- 55 C
- 最大工作温度：
+ 150 C
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RECTRON |
19+ |
DO-214AB |
200000 |
原装库存 |
询价 | ||
RECTRON |
20+ |
DO-214AB |
36800 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
RECTRON |
2023+ |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | |||
RECTRON |
24+ |
DO-214AB |
89000 |
原装现货假一赔十 |
询价 | ||
RECTRON |
DO-214AB |
89000 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
RECTRON |
2023+ |
DO-214AB |
18800 |
芯为科技只做原装 |
询价 | ||
RECTRON |
2022+ |
DO-214AB |
20000 |
只做原装进口现货.假一罚十 |
询价 | ||
RECTRON-瑞创 |
24+25+/26+27+ |
DO-214 |
36218 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 |
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