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TIP110

SiliconNPNDarlingtonPowerTransistor

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

TIP110

SiliconNPNDarlingtonPowerTransistor

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •ThecomplementaryPNPtypesaretheTIP115/116/117respectively •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •Mois

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

TIP110

SiliconNPNDarlingtonPowerTransistors

DESCRIPTION •WithTO-220Cpackage •DARLINGTON •HighDCcurrentgain •Lowcollectorsaturationvoltage •ComplementtotypeTIP115/116/117 APPLICATIONS •Forindustrialuse

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

TIP110

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •ComplementarytoTIP115/116/117 •HighDCCurrentGain:hFE=1000@VCE=4V,IC=1A(Min.) •LowCollector-EmitterSaturationVoltage •IndustrialUse

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

TIP110

PLASTICPOWERTRANSISTORS

IntendedforuseinMediumPowerLinearandSwitchingApplications

CDIL

Continental Device India Limited

TIP110

SiliconNPNDarlingtonPowerTransistors

SAVANTIC

Savantic, Inc.

TIP110

PlasticMedium-PowerComplementarySiliconTransistors

ONSEMION Semiconductor

安森美半导体安森美半导体公司

TIP110

SiliconPowerdarlingtonComplementarytransistors

CentralCentral Semiconductor Corp

美国中央半导体

TIP110

DARLINGTONTRANSISTOR(NPN)

DARLINGTONTRANSISTOR(NPN) FEATURES •HighDCCurrentGain:hFE=1000@VCE=4V,IC=1A(Min.) •LowCollector-EmitterSaturationVoltage •IndustrialUse

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

TIP110

SILICONDARLINGTONPOWERTRANSISTORS

SILICONDARLINGTONPOWERTRANSISTORS NPNepitaxial-basetransistorsinamonolithicDalringtoncircuitandhousedinaTO-220enveloppe. Theyaredesignedforgeneralpurposeamplifierandlow-speedswitchingapplications. PNPcomplementsareTIP115-116-117 CompliancetoRoHS.

COMSET

Comset Semiconductor

详细参数

  • 型号:

    TFMBJ110C-W

  • 功能描述:

    TVS 二极管 - 瞬态电压抑制器 bi-dir

  • RoHS:

  • 制造商:

    Vishay Semiconductors

  • 极性:

    Bidirectional

  • 击穿电压:

    58.9 V

  • 钳位电压:

    77.4 V

  • 峰值浪涌电流:

    38.8 A

  • 封装/箱体:

    DO-214AB

  • 最小工作温度:

    - 55 C

  • 最大工作温度:

    + 150 C

供应商型号品牌批号封装库存备注价格
RECTRON
19+
DO-214AA
200000
原装库存
询价
RECTRON
24+
DO-214AA
89000
原装现货假一赔十
询价
RECTRON
23+
SMB
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
RECTRON
DO-214AA
89000
一级代理 原装正品假一罚十价格优势长期供货
询价
RECTRON
2022+
DO-214AA
20000
只做原装进口现货.假一罚十
询价
RECTRON
24+
DO-214AA
18800
绝对原装进口现货 假一赔十 价格优势!
询价
RECTRON
2019+PB
DO-214AA
89000
原装库存
询价
RECTRON
2020+
DO-214AA-2(SMB)
880000
明嘉莱只做原装正品现货
询价
RECTRON
20+
DO-214AA
36800
原装优势主营型号-可开原型号增税票
询价
更多TFMBJ110C-W供应商 更新时间2025-5-19 17:13:00