N-Channel JFT 30V, 1.2 to 3.0mA, 5.0mS, SOT-883

Features  Small IGSS : max 1.0nA (VGS= 20V, VDS=0V)  Small Ciss : typ 4pF (VDS=10V, VGS=0V, f=1MHz)  Ultrasmall package facilitates miniaturization in end products  Halogen free compliance Applications  Low-Frequency general-purpose amplifier, impedance conversion, infrared sensor

文件：296.56 Kbytes 页数：3 Pages

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安森美半导体

丝印：A2；Package：SOT-883；N-Channel JFT 30V, 1.2 to 3.0mA, 5.0mS, SOT-883

Features  Small IGSS : max 1.0nA (VGS= 20V, VDS=0V)  Small Ciss : typ 4pF (VDS=10V, VGS=0V, f=1MHz)  Ultrasmall package facilitates miniaturization in end products  Halogen free compliance Applications  Low-Frequency general-purpose amplifier, impedance conversion, infrared sensor

文件：296.56 Kbytes 页数：3 Pages

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安森美半导体

N-Channel 100-V (D-S) MOSFET

文件：1.57223 Mbytes 页数：7 Pages

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微碧半导体

N-Channel JFET

文件：130.41 Kbytes 页数：4 Pages

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安森美半导体

N-Channel JFET

文件：130.41 Kbytes 页数：4 Pages

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安森美半导体

N 沟道 JFET，30 V，1.2 至 3.0 mA，5.0 mS，SOT-883

TF412S is a JunctionFET 30 V 10 mA Nch SOT-883(1.0mm×0.6mm×0.4mm) for Low-Frequency General-Purpose Amplifier and Impedance Converter Applications. • Low IGSS 1.0nA MAX\n• High sensitive sensor module by low-leakage JFET\n• Low IDSS 1.2-3.0mA\n• Reduce power consumption by low drain current JFET\n• Ultrasmall package facilitates miniaturization in end products\n• Downsizing of sensor module by tiny package\n• Halogen free compliance\n• Environm;

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安森美半导体

Package：3-XFDFN；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - JFET 描述：JFET N-CH 30V 10MA SOT883

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安森美半导体