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AOB11S65

iscN-ChannelMOSFETTransistor

DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=11A@TC=25℃ •DrainSourceVoltage- :VDSS=650V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.399Ω(Max) •100avalanchetested •MinimumLot-to-L

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOB11S65

N-Channel650V(D-S)MOSFET

FEATURES •Reducedtrr,Qrr,andIRRM •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •LowswitchinglossesduetoreducedQrr •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Telecommunications -Serverandtelecompowersupplies •Light

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

AOB11S65

650V11AaMOSPowerTransistor

GeneralDescription TheAOT11S65&AOB11S65&AOTF11S65havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOB11S65L

N-Channel650V(D-S)MOSFET

FEATURES •Reducedtrr,Qrr,andIRRM •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •LowswitchinglossesduetoreducedQrr •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Telecommunications -Serverandtelecompowersupplies •Light

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

AOT11S65

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOT11S65

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

AOT11S65

650V11AaMOSPowerTransistor

GeneralDescription TheAOT11S65&AOB11S65&AOTF11S65havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOTF11S65

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOTF11S65

650V11AaMOSPowerTransistor

GeneralDescription TheAOT11S65&AOB11S65&AOTF11S65havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOW11S65

650V11AaMOSTMPowerTransistor

GeneralDescription TheAOW11S65&AOWF11S65havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications. ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchecapabilityt

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOW11S65

iscN-ChannelMOSFETTransistor

DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=11A@TC=25℃ •DrainSourceVoltage- :VDSS=650V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.399Ω(Max) •100avalanchetested •MinimumLot-to-L

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOWF11S65

650V11AaMOSTMPowerTransistor

GeneralDescription TheAOW11S65&AOWF11S65havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications. ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchecapabilityt

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

T11S65

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

供应商型号品牌批号封装库存备注价格
VB
2019
TO-220F
55000
绝对原装正品假一罚十!
询价
AO/万代
23+
TO-TO-220F
12300
全新原装真实库存含13点增值税票!
询价
AO/万代
23+
TO-220F
10000
公司只做原装正品
询价
AO/万代
22+
TO-220F
6000
十年配单,只做原装
询价
AOS
NA
12530
一级代理 原装正品假一罚十价格优势长期供货
询价
AO/万代
22+
TO-220F
25000
只做原装进口现货,专注配单
询价
VBSEMI
19+
TO-220F
29600
绝对原装现货,价格优势!
询价
AOS-美国万代
24+25+/26+27+
TO-220-3
78800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
AVAGO/安华高
20+
5000
原装正品
询价
ZIP9
94+
47
全新原装进口自己库存优势
询价
更多TF11S65供应商 更新时间2024-6-21 14:01:00