丝印：TF110P03M；Package：PDFNWB3.3x3.3-8L；P -CHANNEL ENHANCEMENT MODE POWER MOSFET

● General Description The TF110P03M combines advanced trench MOSFETtechnology with a low resistance package toprovideextremely low RDS(ON). ● Features Advance high cell density Trench technology Low RDS(ON) to minimize conductive loss Low Gate Charge for fast switching Low Thermal resistan

文件：2.62205 Mbytes 页数：5 Pages

TUOFENG

拓锋半导体

P -CHANNEL ENHANCEMENT MODE POWER MOSFET

● General Description The TF110P03N combines advanced trench MOSFETtechnology with a low resistance package toprovideextremely low RDS(ON). ● Features Advance high cell density Trench technology Low RDS(ON) to minimize conductive loss Low Gate Charge for fast switching Low Thermal resistan

文件：2.83123 Mbytes 页数：5 Pages

TUOFENG

拓锋半导体

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -105.5A, RDS(ON) =5.8mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. RDS(ON) =8.5mW @VGS = -4.5V.

文件：652.69 Kbytes 页数：4 Pages

CET-MOS

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -92A, RDS(ON) =6.0mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) =9.0mW @VGS = -4.5V. RoHS compliant.

文件：643.31 Kbytes 页数：4 Pages

CET-MOS

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -105.5A, RDS(ON) =5.8mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. RDS(ON) =8.5mW @VGS = -4.5V.

文件：652.69 Kbytes 页数：4 Pages

CET-MOS

华瑞