PDFN 3333 Plastic-Encapsulate MOSFETS

Features • 30V/30A RDS (ON) =7.5mΩ(Typ.)@VGS=10V RDS (ON) =9.3mΩ(Typ.)@VGS=4.5V • Super High Dense Cell Design • Fast Switching Speed • Low gate Charge • 100 avalanche tested • Lead Free and Green Devices Available Applications • Switching Application Systems

文件：2.35814 Mbytes 页数：6 Pages

TUOFENG

拓锋半导体

MOSFET

HMVSEMI

华民微

N-Channel 30-V (D-S) MOSFET

文件：1.69146 Mbytes 页数：7 Pages

VBSEMI

微碧半导体

N-Channel 30-V (D-S) MOSFET

文件：1.63964 Mbytes 页数：7 Pages

VBSEMI

微碧半导体

N-Channel MOSFET Transistor

• DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤7.5mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：334.54 Kbytes 页数：2 Pages

ISC

无锡固电