TF075N03M

PDFN 3333 Plastic-Encapsulate MOSFETS

Features •30V/30A RDS(ON)=7.5mΩ(Typ.)@VGS=10V RDS(ON)=9.3mΩ(Typ.)@VGS=4.5V •SuperHighDenseCellDesign •FastSwitchingSpeed •LowgateCharge •100avalanchetested •LeadFreeandGreenDevicesAvailable Applications •SwitchingApplicationSystems

075N03L

N-Channel30-V(D-S)MOSFET

075N03L

N-Channel30-V(D-S)MOSFET

IIPD075N03L

N-ChannelMOSFETTransistor

•DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤7.5mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

IPD075N03L

N-ChannelMOSFETTransistor

•DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤7.5mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

IPD075N03L

OptiMOSPower-Transistor

IPD075N03LG

OptiMOSPower-Transistor

IPD075N03LG

OptiMOS3Power-Transistor

IPD075N03L-G

OptiMOSPower-Transistor

IPD075N03L-G

OptiMOS3Power-Transistor