首页 >TESYD5V0DN>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
SMDESDProtectionDiode Features -Bi-directionalESDprotection. -IEC61000-4-5(surge);IPP=4A -IEC61000-4-2(ESD);±20KV(contact) -Lowclampingvoltage. -Lowleakagecurrent. -AEC-Q101Qualified. | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
SMDESDProtectionDiode Features -AEC-Q101Qualified. -Lowleakagecurrent. -Lowclampingvoltage. -Uni-directionalESDprotection. -IEC61000-4-5(surge);Ipp=4A. -IEC61000-4-2(ESD);±20KV(contact). | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
SMDESDProtectionDiode | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
SMDESDProtectionDiode Features -UltrasmallSMDpackage:0402C. -IEC61000-4-2Level4ESDprotection. -Bi-directionalESDprotection. -Lowleakagecurrent. -Lowclampingvoltage. -AEC-Q101Qualified. | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
SMDProtectionDiode | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
SMDESDProtectionDiode Features -Bi-directionalESDprotection. -Surfacemountpackage. -UltrasmallSMDpackage:0402C -Highcomponentdensity. -Lowclampingvoltage. -Lowleakage. -IEC61000-4-2ESDprotectionupto±25kV(Contact). -Ultra-Lowcapacitance:0.28pF(typ.) -AEC-Q101Qualified. | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
SMDESDProtectionDiode Features -UltrasmallSMDpackage:0402C. -IEC61000-4-2Level4ESDprotection. -Bi-directionalESDprotection. -Lowleakagecurrent. -Lowclampingvoltage. -AEC-Q101Qualified. | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
SMDESDProtectionDiode | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
SMDESDProtectionDiode | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
SMDESDProtectionDiode Features -Bi-directionalESDprotection. -Surfacemountpackage. -Highcomponentdensity. -Lowclampingvoltage. -Lowleakage. -IEC61000-4-2(ESD);±30KV(contact). -AEC-Q101Qualified. | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP |
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