首页 >TEB1716>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
AluminumCapacitors85C,Miniature,AxialLead FEATURES •Lowleakagecurrent •Longshelflife •IdealforapplicationinTVsets,autoradios,radio-phonecombinations,electronictestingequipment •Materialcategorization:Fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
AluminumCapacitors85°C,Miniature,AxialLead | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
Constantvoltagecontrol | ROHMRohm 罗姆罗姆半导体集团 | ROHM | ||
SWITCHINGP-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION ThisproductisP-ChannelMOSFieldEffectTransistordesignedforDC/DCconvertersandpowermanagementapplicationsofnotebookcomputers. FEATURES •Lowon-resistance RDS(on)1=12.5mΩTYP.(VGS=–10V,ID=–4A) RDS(on)2=17.0mΩTYP.(VGS=–4.5V,ID=–4A) RD | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING P-CHANNELPOWERMOSFET INDUSTRIALUSE FEATURES ·Lowon-resistance RDS(on)1=12.5mWTYP.(VGS=–10V,ID=–4A) RDS(on)2=17.0mWTYP.(VGS=–4.5V,ID=–4A) RDS(on)3=19.0mWTYP.(VGS=–4.0V,ID=–4A) ·LowCiss:Ciss=2100pFTYP. ·Built-inG-Sprotectiond | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING P-CHANNELPOWERMOSFET INDUSTRIALUSE FEATURES ·Lowon-resistance RDS(on)1=12.5mWTYP.(VGS=–10V,ID=–4A) RDS(on)2=17.0mWTYP.(VGS=–4.5V,ID=–4A) RDS(on)3=19.0mWTYP.(VGS=–4.0V,ID=–4A) ·LowCiss:Ciss=2100pFTYP. ·Built-inG-Sprotectiond | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SWITCHINGP-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION ThisproductisP-ChannelMOSFieldEffectTransistordesignedforDC/DCconvertersandpowermanagementapplicationsofnotebookcomputers. FEATURES •Lowon-resistance RDS(on)1=12.5mΩTYP.(VGS=–10V,ID=–4A) RDS(on)2=17.0mΩTYP.(VGS=–4.5V,ID=–4A) RD | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC |
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