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型号	下载订购	功能描述	制造商上传企业	LOGO
TE28F320C3BA100	文件：1.12721 Mbytes Page：68 Pages	Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible 文件：1.12721 Mbytes 页数：68 Pages	Intel 英特尔	Intel
TE28F320C3BA110	文件：1.12721 Mbytes Page：68 Pages	Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible 文件：1.12721 Mbytes 页数：68 Pages	Intel 英特尔	Intel
TE28F320C3BA70	文件：1.12721 Mbytes Page：68 Pages	Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible 文件：1.12721 Mbytes 页数：68 Pages	Intel 英特尔	Intel
TE28F320C3BC70	文件：1.12721 Mbytes Page：68 Pages	Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible 文件：1.12721 Mbytes 页数：68 Pages	Intel 英特尔	Intel
TE28F320C3BC90	文件：1.12721 Mbytes Page：68 Pages	Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible 文件：1.12721 Mbytes 页数：68 Pages	Intel 英特尔	Intel
TE28F320C3BD70	文件：1.12721 Mbytes Page：68 Pages	Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible 文件：1.12721 Mbytes 页数：68 Pages	Intel 英特尔	Intel
TE28F320C3T110	文件：384.02 Kbytes Page：59 Pages	3 VOLT ADVANCED BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible 文件：384.02 Kbytes 页数：59 Pages	Intel 英特尔	Intel
TE28F320C3T90	文件：384.02 Kbytes Page：59 Pages	3 VOLT ADVANCED BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible 文件：384.02 Kbytes 页数：59 Pages	Intel 英特尔	Intel
TE28F320C3TA100	文件：1.12721 Mbytes Page：68 Pages	Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible 文件：1.12721 Mbytes 页数：68 Pages	Intel 英特尔	Intel
TE28F320C3TA110	文件：1.12721 Mbytes Page：68 Pages	Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible 文件：1.12721 Mbytes 页数：68 Pages	Intel 英特尔	Intel

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技术参数

元件类型：
线绕
电阻器数量：
1
底盘贴装电阻器容差：
5%
电阻等级：
最多 1 kΩ
额定电压：
2500 V
端接数量：
2
底盘贴装电阻器端接类型：
焊片
底盘贴装电阻器安装方式：
支架
底盘贴装电阻器包装方式：
零散零件 - 盒装

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市联世界科技有限公司	TE28F800C3BA90	INTEL	24+/25+	TSSOP	100	原装正品现货库存价优	询价
深圳市毅创腾电子科技有限公司	TE215N10E	MOTOROLA	23+	模块	900	全新原装正品,量大可订货!可开17%增值票!价格优势!	询价
深圳市益百分电子有限公司	TE28F320B3BD	INTEL	10+	TSOP	5000	原装现货价格有优势量多可发货	询价
谛辉(北京/上海/青岛 )电子科技有限公司	TE28F160C3TD70	INTEL	25+	TSSOP	18000	原厂直接发货进口原装	询价
深圳市勤思达科技有限公司	TE28F160B3TA110	欧派克			100	原装现货,价格优惠	询价
深圳市一线半导体有限公司	TE28F800C3TA90	INTEL	24+	TSSOP	2479	本站现货库存	询价
齐创科技(上海,北京,青岛)有限公司	TE28F320C3BC90	INTEL	23+	TSOP	5000	原装正品,假一罚十	询价
深圳市恒创达实业有限公司	TE28F800B3TA120	INTEL	17+	TSSOP	6200	100%原装正品现货	询价
深圳市豪迈兴电子有限公司	TE28F128J3C150	INTEL	24+	TSOP	6232	公司原厂原装现货假一罚十!特价出售!强势库存!	询价
深圳市星佑电子有限公司	TE28F160B3BA110	INT	05+	原厂原装	4515	只做全新原装真实现货供应	询价

更多TE2供应商更新时间2025-11-25 18:48:00

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