TE2数据手册供应价格英特尔第30页-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
TE28F320C3BA100	文件：1.12721 Mbytes Page：68 Pages	Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible 文件：1.12721 Mbytes 页数：68 Pages	INTEL 英特尔	INTEL
TE28F320C3BA110	文件：1.12721 Mbytes Page：68 Pages	Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible 文件：1.12721 Mbytes 页数：68 Pages	INTEL 英特尔	INTEL
TE28F320C3BA70	文件：1.12721 Mbytes Page：68 Pages	Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible 文件：1.12721 Mbytes 页数：68 Pages	INTEL 英特尔	INTEL
TE28F320C3BC70	文件：1.12721 Mbytes Page：68 Pages	Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible 文件：1.12721 Mbytes 页数：68 Pages	INTEL 英特尔	INTEL
TE28F320C3BC90	文件：1.12721 Mbytes Page：68 Pages	Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible 文件：1.12721 Mbytes 页数：68 Pages	INTEL 英特尔	INTEL
TE28F320C3BD70	文件：1.12721 Mbytes Page：68 Pages	Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible 文件：1.12721 Mbytes 页数：68 Pages	INTEL 英特尔	INTEL
TE28F320C3T110	文件：384.02 Kbytes Page：59 Pages	3 VOLT ADVANCED BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible 文件：384.02 Kbytes 页数：59 Pages	INTEL 英特尔	INTEL
TE28F320C3T90	文件：384.02 Kbytes Page：59 Pages	3 VOLT ADVANCED BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible 文件：384.02 Kbytes 页数：59 Pages	INTEL 英特尔	INTEL
TE28F320C3TA100	文件：1.12721 Mbytes Page：68 Pages	Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible 文件：1.12721 Mbytes 页数：68 Pages	INTEL 英特尔	INTEL
TE28F320C3TA110	文件：1.12721 Mbytes Page：68 Pages	Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible 文件：1.12721 Mbytes 页数：68 Pages	INTEL 英特尔	INTEL

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技术参数

元件类型：
线绕
电阻器数量：
1
底盘贴装电阻器容差：
5%
电阻等级：
最多 1 kΩ
额定电压：
2500 V
端接数量：
2
底盘贴装电阻器端接类型：
焊片
底盘贴装电阻器安装方式：
支架
底盘贴装电阻器包装方式：
零散零件 - 盒装

供应商	型号	品牌	批号	封装	库存	备注	价格
千层芯半导体(深圳)有限公司	TE28F128J3D75	INTEL	24+	TSOP-54	25000	一级专营品牌全新原装热卖	询价
深圳市福田区绿盛电子商行	TE28F800B3WG-10T	MICRON	2018+	TSOP	26976	代理原装现货/特价热卖!	询价
深圳市安富世纪电子有限公司	TE28F256J3C-125	orig	23+	orig	1	全新原装正品现货,支持订货	询价
深圳市瑞卓芯科技有限公司	TE28F800B5B90	TE/泰科	2022+	TSOP	17700	原装正品	询价
深圳市粤骏腾电子科技有限公司	TE28F160C3TA90	恩XP	24+	QFP	74114	原装正品现货供应	询价
深圳市瑞祥辉半导体有限公司	TE28F320J3D75A	INTEL	2308+	TSOP56	4852	十年专业专注优势渠道商正品保证公司现货	询价
瀚佳科技(深圳)有限公司	TE28F320C3TC70	INTEL	24+	TSOP48	35210	原装现货/放心购买	询价
深圳市金芯世纪电子有限公司	TE28F160C3TC90	INTERSIL	22+		100000	代理渠道/只做原装/可含税	询价
深圳市得捷芯城科技有限公司	TE28F128P30T85A	Nexperia	25+	TFSOP-56-18.4mm	21000	正规渠道,免费送样。支持账期,BOM一站式配齐	询价
深圳市富利微电子科技有限公司	TE28F128J3D75	INTEL/英特尔	25+	TSOP	30000	房间原装现货特价热卖,有单详谈	询价

更多TE2供应商更新时间2026-1-26 10:48:00

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