TE2数据手册供应价格英特尔第25页-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
TE28F160C3BC90	文件：1.12721 Mbytes Page：68 Pages	Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible 文件：1.12721 Mbytes 页数：68 Pages	INTEL 英特尔	INTEL
TE28F160C3BD70	文件：1.12721 Mbytes Page：68 Pages	Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible 文件：1.12721 Mbytes 页数：68 Pages	INTEL 英特尔	INTEL
TE28F160C3T110	文件：384.02 Kbytes Page：59 Pages	3 VOLT ADVANCED BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible 文件：384.02 Kbytes 页数：59 Pages	INTEL 英特尔	INTEL
TE28F160C3T90	文件：384.02 Kbytes Page：59 Pages	3 VOLT ADVANCED BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible 文件：384.02 Kbytes 页数：59 Pages	INTEL 英特尔	INTEL
TE28F160C3TA110	文件：1.12721 Mbytes Page：68 Pages	Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible 文件：1.12721 Mbytes 页数：68 Pages	INTEL 英特尔	INTEL
TE28F160C3TA70	文件：1.12721 Mbytes Page：68 Pages	Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible 文件：1.12721 Mbytes 页数：68 Pages	INTEL 英特尔	INTEL
TE28F160C3TA90	文件：1.12721 Mbytes Page：68 Pages	Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible 文件：1.12721 Mbytes 页数：68 Pages	INTEL 英特尔	INTEL
TE28F160C3TC70	文件：1.12721 Mbytes Page：68 Pages	Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible 文件：1.12721 Mbytes 页数：68 Pages	INTEL 英特尔	INTEL
TE28F160C3TC80	文件：1.12721 Mbytes Page：68 Pages	Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible 文件：1.12721 Mbytes 页数：68 Pages	INTEL 英特尔	INTEL
TE28F160C3TC90	文件：1.12721 Mbytes Page：68 Pages	Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible 文件：1.12721 Mbytes 页数：68 Pages	INTEL 英特尔	INTEL

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技术参数

元件类型：
线绕
电阻器数量：
1
底盘贴装电阻器容差：
5%
电阻等级：
最多 1 kΩ
额定电压：
2500 V
端接数量：
2
底盘贴装电阻器端接类型：
焊片
底盘贴装电阻器安装方式：
支架
底盘贴装电阻器包装方式：
零散零件 - 盒装

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市赛芯源科技有限公司	TE28F800CVT90	INTEL	19+	TSOP	32000	原装正品,现货特价	询价
深圳市信佳源电子有限公司	TE28F320C3BD70	INTEL/英特尔	06+	TSOP48	1056	原装/现货	询价
深圳市宏世佳电子科技有限公司	TE2486	MOT	2025+	TO-3	5185	全新原厂原装产品、公司现货销售	询价
千层芯半导体(深圳)有限公司	TE28F128J3D75	INTEL	24+	TSOP-54	25000	一级专营品牌全新原装热卖	询价
深圳市恒创达实业有限公司	TE28F800B3TA120	INTEL	17+	TSSOP	6200	100%原装正品现货	询价
深圳市博中泰实业有限公司	TE28F640J3A120内存芯片	INTEL/英特尔	24+	TSSOP56	60000		询价
瀚佳科技(深圳)有限公司	TE215N10E	ON	24+	SOT227	2100	公司大量全新现货随时可以发货	询价
深圳市澳亿芯电子科技有限公司	TE28F160		25+		50	普通	询价
深圳市安富世纪电子有限公司	TE28F256J3C-125	orig	23+	orig	1	全新原装正品现货,支持订货	询价
深圳市乐峰达科技有限公司	TE200	Rakon 锐康	25+	N/A	10000	全新原装正品、可开增票、可溯源、一站式配单	询价

更多TE2供应商更新时间2022-6-12 10:12:00

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