Ultra Miniature 4-Pin Small Outline Package

Features  Ultra Miniature 4-Pin Small Outline Package  Zero Volt Switching  800V Blocking Voltage  Low Trigger Current (10mA MAX)  High Input-to-Output Isolation (3.75kVRMS)  Long Life / High Reliability  RoHS / Pb-Free / REACH Compliant Applications  Home Appliances  Motor /

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SOLIDSTATE

Ultra Miniature 4-Pin Small Outline Package

Features  Ultra Miniature 4-Pin Small Outline Package  Zero Volt Switching  800V Blocking Voltage  Low Trigger Current (5mA MAX)  High Input-to-Output Isolation (3.75kVRMS)  Long Life / High Reliability  RoHS / Pb-Free / REACH Compliant Applications  Home Appliances  Motor / D

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SOLIDSTATE

N-Channel Enhancement Mode MOSFET

DESCRIPTION The TDM31026 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Application  High Efficiency Synchronous Rectification in SMPS.  Uninterruptible Power Supply.  Motor Dri

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TECHCODETECHCODE SEMICONDUCTOR, INC.

泰德半导体泰德半导体有限公司

N-Channel Enhancement Mode MOSFET

DESCRIPTION The TDM31066 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES  RDS(ON)

文件：753.88 Kbytes 页数：7 Pages

TECHCODETECHCODE SEMICONDUCTOR, INC.

泰德半导体泰德半导体有限公司

N-Channel Enhancement Mode MOSFET

DESCRIPTION The TDM3302 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES  30V/100A RDS(ON)

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TECHCODETECHCODE SEMICONDUCTOR, INC.

泰德半导体泰德半导体有限公司

N-Channel Enhancement Mode MOSFET

DESCRIPTION The TDM3428 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES  RDS(ON)

文件：311.63 Kbytes 页数：7 Pages

TECHCODETECHCODE SEMICONDUCTOR, INC.

泰德半导体泰德半导体有限公司

N-Channel Enhancement Mode MOSFET

DESCRIPTION The TDM3428 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES  RDS(ON)

文件：311.63 Kbytes 页数：7 Pages

TECHCODETECHCODE SEMICONDUCTOR, INC.

泰德半导体泰德半导体有限公司

P-Channel Enhancement Mode MOSFET

DESCRIPTION The TDM3435 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES  ‐30V/‐68A  RDS(ON)

文件：570.01 Kbytes 页数：7 Pages

TECHCODETECHCODE SEMICONDUCTOR, INC.

泰德半导体泰德半导体有限公司

Dual N-Channel Enhancement Mode MOSFET

DESCRIPTION The TDM3534 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES  RDS(ON)

文件：649.09 Kbytes 页数：8 Pages

TECHCODETECHCODE SEMICONDUCTOR, INC.

泰德半导体泰德半导体有限公司

N-Channel Enhancement Mode MOSFET

DESCRIPTION The TDM3536 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES  RDS(ON)

文件：436.87 Kbytes 页数：8 Pages

TECHCODETECHCODE SEMICONDUCTOR, INC.

泰德半导体泰德半导体有限公司