TDM3428

N-Channel Enhancement Mode MOSFET

DESCRIPTION TheTDM3428usesadvancedtrenchtechnologyto provideexcellentRDS(ON)andlowgatecharge.This deviceissuitableforuseasaloadswitchorinPWM applications. GENERALFEATURES RDS(ON)

TDM3428

MOSFET;

TDM3428B

MOSFET;

3428

100×.100Latch/Ejector,StraightandRightAngle

•Military(with3M’s3518&N3518polarizingkey)and centerbumppolarization •Optionalejectorlatches •Mountingholesforsecuringheadertoboard •Optionalpolarizingpostsavailable •Hightemperatureinsulatoroptionsuitablefor“nolead” solderingoperations •Hightemperatureop

3428

3MPak1004-WallHeader

3428

3/8SquareDriveSockets,SAE

AM3428N

N-Channel20V(D-S)MOSFET

AP3428

1.5MHZ,1ASTEP-DOWNDC-DCBUCKCONVERTER

AP3428

1.5MHZ,1ASTEP-DOWNDC-DCBUCKCONVERTER

Features -OutputCurrent:Upto1A -OutputVoltage:0.6VtoVIN -InputVoltage:2.5Vto5.5V -0.6VReferenceVoltagewith±2Precision -40μA(typ)NoLoadQuiescentCurrent -ShutdownCurrent:

AP3428A

1.5MHZ,1ASTEP-DOWNDC-DCBUCKCONVERTER