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AUIRF9952Q

AUTOMOTIVEGRADE

Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

AUIRF9952QTR

AUTOMOTIVEGRADE

Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

AUIRF9952QTR

AdvancedPlanarTechnologyLowOn-Resistance

Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower

IRF

International Rectifier

CEM9952A

DualEnhancementModeFieldEffectTransistor(NandPChannel)

FEATURES ■30V,3.7A,RDS(ON)=80mΩ@VGS=10V. RDS(ON)=110mΩ@VGS=4.5V. ■-30V,-2.9A,RDS(ON)=100mΩ@VGS=-10V. RDS(ON)=150mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapab

CETChino-Excel Technology

华瑞华瑞股份有限公司

CHM9952AJPT

DualEnhancementModeFieldEffectTransistor

N-channel:VOLTAGE30VoltsCURRENT3.7Ampere P-channel:VOLTAGE30VoltsCURRENT2.9Ampere FEATURE *Smallflatpackage.(SO-8) *SuperhighdensecelldesignforextremelylowRDS(ON). *Leadfreeproductisacquired. *Highpowerandcurrenthandingcapability. APPLICATION *Servomo

CHENMKOCHENMKO ENTERPRISE CO., LTD.

力勤力勤股份有限公司

IRF9952

PowerMOSFET(Vdss=-30V)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF9952PBF

ULTRALOWONRESISTANCE

IRF

International Rectifier

IRF9952PBF

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF9952QPBF

HEXFETPowerMOSFET

Description TheseHEXFET®PowerMOSFETsinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFETsarea150°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetit

IRF

International Rectifier

IRF9952QPBF

AdvancedProcessTechnology

Description TheseHEXFET®PowerMOSFETsinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFETsarea150°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetit

IRF

International Rectifier

详细参数

  • 型号:

    TDA9952HN

  • 制造商:

    PHILIPS

  • 制造商全称:

    NXP Semiconductors

  • 功能描述:

    10-bit, 3.0 V, 25 Msps analog-to-digital interface for CCD cameras

供应商型号品牌批号封装库存备注价格
PHILIPS
25+
BGA48
870
⊙⊙新加坡大量现货库存,深圳常备现货!欢迎查询!⊙
询价
PHILIPS
24+
BGA48
870
现货供应
询价
PHILIPS
00/01+
BGA48
761
全新原装100真实现货供应
询价
PHIL
24+
BGA
6232
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
PHILIPS
24+
BGA48
2987
只售原装自家现货!诚信经营!欢迎来电!
询价
PHILIPS/飞利浦
23+
QFP
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
询价
NXP(恩智浦)
21+
6000
只做原装正品,卖元器件不赚钱交个朋友
询价
NXP(恩智浦)
22+
NA
6000
原厂原装现货
询价
NXP(恩智浦)
23+
NA
6000
原装现货订货价格优势
询价
NXP(恩智浦)
23+
N/A
6000
公司只做原装,可来电咨询
询价
更多TDA9952HN供应商 更新时间2025-5-1 11:02:00