TDA2791

Television sound combination

TZ2791A

HC49USDIP25MHzCrystalUnit

Features: SurfaceMountSeamWeldPackage GoodFrequencyPerturbationandStabilityovertemperature DescriptionandApplications: HC49UScrystalunitforuseinwirelesstelecommunicationsdevices

U2791B

1000MHzQuadratureDemodulator

U2791B-FS

1000MHzQuadratureDemodulator

UPA2791GR

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION TheμPA2791GRisN-andP-channelMOSFieldEffect Transistorsdesignedforswitchingapplication. FEATURES •Lowon-stateresistance N-channelRDS(on)1=36.0mΩMAX.(VGS=10V,ID=3.0A) RDS(on)2=50.0mΩMAX.(VGS=4.5V,ID=3.0A) P-channelRDS(on)1=82mΩMAX.(VG

UPA2791GR

N-andP-Channel30V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •MotorDrive •MobilePowerBank

UPA2791GR

MOSFIELDEFFECTTRANSISTORSWITCHINGN-ANDP-CHANNELPOWERMOSFET

DESCRIPTION TheμPA2791GRisN-andP-channelMOSFieldEffectTransistorsdesignedforswitchingapplication. FEATURES •Lowon-stateresistance N-channelRDS(on)1=36.0mΩMAX.(VGS=10V,ID=3.0A) RDS(on)2=50.0mΩMAX.(VGS=4.5V,ID=3.0A) P-channel

UPC2791TB

5V,SUPERMINIMOLDSILICONMMICWIDEBANDAMPLIFIER

UPC2791TB

5V,SUPERMINIMOLDSILICONMMICVHF-UHFWIDEBANDAMPLIFIER

DESCRIPTION TheµPC2791TBandµPC2792TBaresiliconmonolithicintegratedcircuitsdesignedas2ndIFbufferamplifierforDBStuners.TheseICsarepackagedinsuperminimoldpackagewhichissmallerthanconventionalminimold.So,inthecaseofreducingyoursystemsize,µPC2791TBandµPC2792T