TD10M25资料datasheet下载原装现货NTENTE-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
TD10M25	文件：17.53 Kbytes Page：1 Pages	SOLID TANTALUM 文件：17.53 Kbytes 页数：1 Pages	NTE	NTE
TD10M25	文件：300 bytes Page：1 Pages	钽电容	NTE	NTE
VHT10M25	文件：17.87 Kbytes Page：2 Pages	105째C ALUMINUM ELECTROLYTIC 文件：17.87 Kbytes 页数：2 Pages	NTE	NTE
APT10M25	文件：69.27 Kbytes Page：4 Pages	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching 文件：69.27 Kbytes 页数：4 Pages	ADPOW	ADPOW
APT10M25BVFR	文件：69.27 Kbytes Page：4 Pages	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching 文件：69.27 Kbytes 页数：4 Pages	ADPOW	ADPOW
APT10M25BVR	文件：65.68 Kbytes Page：4 Pages	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 文件：65.68 Kbytes 页数：4 Pages	ADPOW	ADPOW

更多TD10M25供应商更新时间2026-4-18 11:06:00