首页 >TCS4189-F>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
LockitLoopsandClips | HeycoHeyco. 海科 | Heyco | ||
Lockit™LoopsandClips | HeycoHeyco. 海科 | Heyco | ||
TheSTEVAL-CCA049V1isademonstrationboarddesignedfortheevaluation | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
P-Channel40V(D-S)MOSFET FEATURES •TrenchFET®powerMOSFET •Packagewithlowthermalresistance •100RgandUIStested | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
P-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAOD4189usesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.WiththeexcellentthermalresistanceoftheDPAKpackage,thisdeviceiswellsuitedforhighcurrentloadapplications. Features VDS(V)=-40V ID=-40A(VGS=- | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
iscP-ChannelMOSFETTransistor DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=-40A@TC=25℃ •DrainSourceVoltage- :VDSS=-40V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=22mΩ(Max) •100avalanchetested •MinimumLot-to-Lo | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
P-ChannelEnhancementModeFieldEffectTransistor Application ReverseBatteryprotection »Loadswitch oPowermanagement PWMApplication | TECHPUBLICTECH PUBLIC Electronics co LTD 台舟电子台舟电子股份有限公司 | TECHPUBLIC | ||
P-ChannelMOSFET Features ●VDS(V)=-40V ●ID=-40A ●RDS(ON) | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊欧翊欧半导体 | EVVOSEMI | ||
P-ChannelMOSFET Features ●VDS(V)=-40V ●ID=-40A ●RDS(ON) | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | UMW | ||
iscP-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=-55A@TC=25℃ ·DrainSourceVoltage :VDSS=-40V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=10mΩ(Max)@VGS=-10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
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