丝印：812NA；Package：WSON10B；18 V, 5A eFuse IC with Adjustable Overcurrent Protection and Reverse Current Blocking FET Control

The TCKE8xx series is 18 V high input voltage Single Input Single Output eFuse ICs . It can be used as a reusable fuse, and includes protection features like adjustable over current limit by an external resistor short circuit protection, over voltage clamp , adjustable slew rete c ontrol by a

文件：1.5627 Mbytes 页数：24 Pages

TOSHIBA

东芝

eFuse IC

Application：Consumer equipment / Server / IOT equipment / Storage / General purpose power supply\nFeature：Wide range input voltage / Low on-resistance / High output current\nOver Current Protection：Adjustable\nOver Voltage Protection Type：Fixed Over Voltage Clamp\nInrush Current Reduction Type：Adjus Input Voltage VIN 18 V \nPower Dissipation PD 2.4 W \nJunction Temperature Tj 150 ℃ ;

Toshiba

东芝

Package：10-WFDFN 裸露焊盘；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 功能：电子保险丝 类别：集成电路（IC） 电流调节/管理 描述：EFUSE IC, AUTO RETRY, 15.1V VOLT

Toshiba Semiconductor and Storage

SENSITIVE & STANDARD(12A SCRs)

DESCRIPTION Available either in sensitive (TS12) or standard (TYN, TN12...) gate triggering levels, the 12A SCR series is suitable to fit all modes of control found in applications such as overvoltage crowbar protection, motor control circuits in power tools and kitchen aids, in-rush curr

文件：122.63 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD

The µPA812T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.4 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High Gain |S21e|2 = 12 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • A Small Mini M

文件：50.06 Kbytes 页数：6 Pages

NEC

瑞萨

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD

The µPA812T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.4 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High Gain |S21e|2 = 12 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • A Small Mini M

文件：50.06 Kbytes 页数：6 Pages

NEC

瑞萨