TCET111.G中文资料威世科技数据手册PDF规格书

DESCRIPTION

The TCET111., TCET111.G consists of a phototransistor

optically coupled to a gallium arsenide infrared-emitting

diode in a 4 pin plastic dual inline package.

APPLICATIONS

Circuits for safe protective separation against electrical

shock according to safety class II (reinforced isolation):

• for appl. class I to IV at mains voltage  300 V

• for appl. class I to III at mains voltage  600 V according

to DIN EN 60747-5-5 (VDE 0884), suitable for:

- Switch-mode power supplies

- Line receiver

- Computer peripheral interface

- Microprocessor system interface

FEATURES

• CTR offered in 9 groups

• Isolation materials according to UL 94 V-0

• Pollution degree 2

(DIN / VDE 0110 / resp. IEC 60664)

• Climatic classification 55 / 100 / 21

(IEC 60068 part 1)

• Special construction: therefore, extra low coupling

capacity of typical 0.2 pF, high common mode rejection

• Low temperature coefficient of CTR

• Temperature range -40 °C to +110 °C

• Rated impulse voltage (transient overvoltage)

VIOTM = 6 kVpeak

• Isolation test voltage (partial discharge test voltage)

Vpd = 1.6 kV

• Rated isolation voltage (RMS includes DC)

VIOWM = 600 VRMS

• Rated recurring peak voltage (repetitive) VIORM = 850 Vpeak

• Creepage current resistance according to VDE 0303/

IEC 60112 comparative tracking index: CTI  175

• Thickness through insulation  4 mm

• External creepage distance > 8 mm

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

AGENCY APPROVALS

• UL

• cUL

• DIN EN 60747-5-5 (VDE 0884)

• BSI: EN 62368-1:2014