TCET1106G中文资料威世科技数据手册PDF规格书

DESCRIPTION

The TCET110. consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic dual inline package.

FEATURES

• High common mode rejection

• Low temperature coefficient of CTR

• CTR offered in 9 groups

• Reinforced isolation provides circuit protection against electrical shock (safety class II)

• Isolation materials according to UL 94 V-O

• Pollution degree 2 (DIN/VDE 0110/resp. IEC 60664)

• Climatic classification 55/100/21 (IEC 60068 part 1)

• Rated impulse voltage (transient overvoltage) VIOTM = 6 kVpeak

• Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV

• Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS

• Rated recurring peak voltage (repetitive) VIORM = 848 Vpeak

• Creepage current resistance according to VDE 0303/ IEC 60112 comparative tracking index: CTI ≥ 175

• Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC

APPLICATIONS

Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation):

• for appl. class I - IV at mains voltage ≤ 300 V

• for appl. class I - III at mains voltage ≤ 600 V according to DIN EN 60747-5-5 (VDE 0884), suitable for:

    - Switch-mode power supplies

    - Line receiver

    - Computer peripheral interface

    - Microprocessor system interface