TCET111.G中文资料威世科技数据手册PDF规格书
TCET111.G规格书详情
DESCRIPTION
The TCET111., TCET111.G consists of a phototransistor
optically coupled to a gallium arsenide infrared-emitting
diode in a 4 pin plastic dual inline package.
FEATURES
• CTR offered in 9 groups
• Isolation materials according to UL 94 V-0
• Pollution degree 2
(DIN / VDE 0110 / resp. IEC 60664)
• Climatic classification 55 / 100 / 21
(IEC 60068 part 1)
• Special construction: therefore, extra low coupling
capacity of typical 0.2 pF, high common mode rejection
• Low temperature coefficient of CTR
• Temperature range -40 °C to +110 °C
• Rated impulse voltage (transient overvoltage)
VIOTM = 6 kVpeak
• Isolation test voltage (partial discharge test voltage)
Vpd = 1.6 kV
• Rated isolation voltage (RMS includes DC)
VIOWM = 600 VRMS
• Rated recurring peak voltage (repetitive) VIORM = 850 Vpeak
• Creepage current resistance according to VDE 0303/
IEC 60112 comparative tracking index: CTI 175
• Thickness through insulation 4 mm
• External creepage distance > 8 mm
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
VISHAY/威世 |
24+ |
NA/ |
15550 |
原装现货,当天可交货,原型号开票 |
询价 | ||
VISHAY |
2018+ |
DIP |
6528 |
承若只做进口原装正品假一赔十! |
询价 | ||
VISHAY/威世 |
22+ |
DIP |
21458 |
原装正品现货 |
询价 | ||
威世 |
21+ |
DIP |
12588 |
原装现货,量大可定 |
询价 | ||
VISHAY/威世 |
25+ |
DIP |
860000 |
明嘉莱只做原装正品现货 |
询价 | ||
VISHAY |
23+ |
DIP4 |
20000 |
原装正品,假一罚十 |
询价 | ||
VISHAY/威世 |
24+ |
DIP-4 |
9600 |
原装现货,优势供应,支持实单! |
询价 | ||
VISHAY/威世 |
22+ |
DIP-4 |
18000 |
只做全新原装,支持BOM配单,假一罚十 |
询价 | ||
VISHAY/威世 |
2447 |
DIP-4 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
VISHAY/威世 |
2023+ |
DIP4 |
60000 |
原厂全新正品旗舰店优势现货 |
询价 |