首页 >TCD2712DG(Z.KP)>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
ALSProximitySensorModule Features •Tiny1mmx2mmx0.5mmmodule •1.8Vpowersupplywith1.8VI²Cbus •Sleepmode(0.7μA) •VCSELIRemitter •Integratedfactorycalibrated940nmIRVCSEL •Crosstalkandambientlightcancellation •Wideconfigurationrange •Highsensitivity •2channels(photopicALS+IR) | OSRAMOSRAM GmbH 艾迈斯欧司朗欧司朗光电半导体 | OSRAM | ||
TW2710andTW2712SingleBandGNSSAntennas | TALLYSMAN Tallysman Wireless Inc. | TALLYSMAN | ||
MOSFIELDEFFECTTRANSISTOR DESCRIPTION TheμPA2712GRisP-ChannelMOSFieldEffectTransistor designedforpowermanagementapplicationsofnotebook computersandLi-ionbatteryprotectioncircuit. FEATURES •Lowon-stateresistance RDS(on)1=13mΩMAX.(VGS=−10V,ID=−5.0A) RDS(on)2=21mΩMAX.(VGS=−4.5V, | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
P-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
SWITCHINGP-CHANNELPOWERMOSFET | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
2.6GHzWIDEBANDAMPLIFIERSILICONBIPOLARMONOLITHICINTEGRATEDCIRCUIT DESCRIPTION TheUPC2709TandUPC2712TareSiliconMonolithicintegratedcircuitsmanufacturedusingtheNESATIIIprocess.Thesedevicesaresuitableasbufferamplifiersforwide-bandapplications.Theyaredesignedforlowcostgainstagesincellularradios,GPSreceivers,DBStuners,PCN,a | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
2.5GHzSILICONMMICWIDE-BANDAMPLIFIER DESCRIPTION TheUPC2709TandUPC2712TareSiliconMonolithicintegratedcircuitsmanufacturedusingtheNESATIIIprocess.Thesedevicesaresuitableasbufferamplifiersforwide-bandapplications.Theyaredesignedforlowcostgainstagesincellularradios,GPSreceivers,DBStuners,PCN,a | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
5V,SUPERMINIMOLDSILICONMMICWIDEBANDAMPLIFIER | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
3.3V,SILICONGERMANIUMMMICWIDEBANDAMPLIFIER | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
5V,SUPERMINIMOLDSILICONMMICWIDEBANDAMPLIFIER | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC |
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