TPSMB650CA-A

EiceDRIVER™enhanced1EDI302xAS/1EDI303xASevaluationboard

TheEiceDRIVER™enhanced1EDI302xAS/1EDI303xASevaluationboardisaversatileevaluationplatformforthe EiceDRIVER™enhanced1EDI302xAS/1EDI303xASfamily.Itfeaturesahalfbridgeconfiguration,seeFigure1. ThereistheoptiontomounteithertheHybridPACK™DSCIGBTmoduleoradiscreteP

TS650

BuckSwitchingRegulator

TS650CS

BuckSwitchingRegulator

TSHA650

GaAlAsInfraredEmittingDiodesinø5mm(T–13/4)Package

Description TheTSHA650.seriesarehighefficiencyinfraredemittingdiodesinGaAlAsonGaAlAstechnology,moldedinaclear,untintedplasticpackage. IncomparisonwiththestandardGaAsonGaAstechnologythesehighintensityemittersfeatureabout70radiantpowerimprovement. Incontras

UBD650

HIGH-SPEEDTRANSIENTSURGEPROTECTORS

UPA650TT

P-CHANNELMOSFIELDEFFECTTRANSISTORFORSWITCHING

DESCRIPTION TheµPA650TTisaswitchingdevice,whichcanbedrivendirectlybya1.8Vpowersource. Thisdevicefeaturesalowon-stateresistanceandexcellentswitchingcharacteristics,andissuitableforapplicationssuchaspowerswitchofportablemachineandsoon. FEATURES •1.8Vdr

UPA650TT

P-Channel20V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •LoadSwitchforPortableDevices -CellularPhone -DSC -PortableGameConsole -MP3 -GPS

UPA650TT

MOSFIELDEFFECTTRANSISTOR

P-CHANNELMOSFIELDEFFECTTRANSISTOR FORSWITCHING FEATURES •1.8Vdriveavailable •Lowon-stateresistance RDS(on)1=50mΩMAX.(VGS=−4.5V,ID=−2.5A) RDS(on)2=68mΩMAX.(VGS=−2.5V,ID=−2.5A) RDS(on)3=114mΩMAX.(VGS=−1.8V,ID=−1.5A)

USD650

POWERSCHOTTKYRECTIFIERS

POWERSCHOTTKYRECTIFIERS

USD650C

DUALPOWERSCHOTTKYRECTIFIERS

DUALPOWERSCHOTTKYRECTIFIERS