TC58NVG0S3AFT05中文资料东芝数据手册PDF规格书

1 GBIT (128M × 8 BITS) CMOS NAND EEPROM

DESCRIPTION

The TC58NVG0S3A is a single 3.3-V 1G-bit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND EEPROM) organized as (2048 + 64) bytes × 64 pages × 1024 blocks. The device has a 2112-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2112-byte increments. The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes: 2112 bytes × 64 pages).

FEATURES

• Organization

Memory cell array 2112 × 64K × 8

Register 2112 × 8

Page size 2112 bytes

Block size (128K + 4K) bytes

• Modes

Read, Reset, Auto Page Program

Auto Block Erase, Status Read

• Mode control

Serial input/output

Command control

• Powersupply VCC = 2.7 V to 3.6 V

• Program/Erase Cycles 1E5 Cycles (With ECC)

• Access time

Cell array to register 25 µs max

Serial Read Cycle 50 ns min

• Operating current

Read (50 ns cycle) 10 mA typ.

Program (avg.) 10 mA typ.

Erase (avg.) 10 mA typ.

Standby 50 µA max

• Package

TSOPI48-P-1220-0.50 (Weight: 0.53 g typ.)