TC57H256D-70中文资料东芝数据手册PDF规格书

DESCRIPTION

The TC57H256D is a 32,768 word x 8 bit CMOS ultraviolet light erasable and electrically

programmable read only memory. For read operation, the TC57H256D's access time

is 70ns, and the TC57H256D operates from a single 5-volt power supply and has low

power standby mode which reduces the power dissipation without increasing access time.

The standby mode is achieved by applying a TTL-high level signal to the CE input.

Advanced CMOS technology reduces the maximum active current to 50mA/14.2MHz and stand-

by current to 100μA. For program operation, the programming is achieved by using the

high speed programming mode. For program operation, the programming is achieved by

using high speed programming mode. TC57H256D is fabricated with the CMOS technology.

and the N-channel silicon double layer gate MOS technology.

FEATURES

Peripheral circuit: CMOS

: N-MOS

.

• Memory cell

-70

-85

5V±5 5V±10

70ns 85ns

Single 5V power supply

Vcc

TACC

Full static operation

High speed programming mode

Inputs and outputs TTL compatible

Pin compatible with ROM TC53257P, TMM23256P,

TMM27256AD and TC57256AD

Standard 28 pin DIP cerdip package