TC57256D-25中文资料东芝数据手册PDF规格书

DESCRIPTION

The TC57256D is a 32,768 word X8 bit CMOS

ultraviolet light erasable and electrically programmable read only memory. For read operation, the

TC57256D's access time is 200ns, and the TC57256D

operates from a single 5-volt power supply and has

low power standby mode which reduces the power

dissipation without increasing access time. The standby mode is achieved by applying a TTL-high level

signal to the CE input. Advanced CMOS technology

reduces the maximum active current to 30 mA/5MHz

and standby current to 100pA.

For program operation, the programming is achieved by using the high speed programming mode.

Program supply voltage is 21 V. The programming of

the TC57256D is accomplished within one and a half

minutes (typ.) TC57256D is fabricated using CMOS

technology and N-channel silicon double layer gate

MOS technology.

FEATURES

• Peripheral circuit: CMOS

Memory cell N-MOS

• Low power dissipation

30mA/5MHZ (active)

100llA (standby)

• Fast access time TC572560-20 200 ns

TC572560-25 250 ns

• Single 5V power supply

• Full static operation

• High speed programming mode

• Inputs and outputs TTL compatible

• Pin compatible with ROMS TC53257P, TMM23256P

- 'and EPROM i27256

• Standard 28 pin DIP cerdip Package