262,144 WORD x 4 BIT SYNCHRONOUS STATIC RAM

Description The TC55BS4258J is a 1,048,576 bit synchronous static random access memory fabricated using BICMOS technology and organized as 262,144 words by 4 bits. The TC55BS4258J has separate data inputs and outputs and a write-cycle pass-through feature. Designed for pipelined architectures,

文件：303.62 Kbytes 页数：6 Pages

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东芝

262,144 WORD x 4 BIT SYNCHRONOUS STATIC RAM

Description The TC55BS4258J is a 1,048,576 bit synchronous static random access memory fabricated using BICMOS technology and organized as 262,144 words by 4 bits. The TC55BS4258J has separate data inputs and outputs and a write-cycle pass-through feature. Designed for pipelined architectures,

文件：303.62 Kbytes 页数：6 Pages

TOSHIBA

东芝

262,144 WORD x 4 BIT SYNCHRONOUS STATIC RAM

Description The TC55BS4258J is a 1,048,576 bit synchronous static random access memory fabricated using BICMOS technology and organized as 262,144 words by 4 bits. The TC55BS4258J has separate data inputs and outputs and a write-cycle pass-through feature. Designed for pipelined architectures,

文件：303.62 Kbytes 页数：6 Pages

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东芝

TSOP48

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TSSOP48

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