262,144 WORD x 16 BIT STATIC RAM

Description The TC554161FTL/TRL is a 4,194,304 bit CMOS static random access memory organized as 262,144 words by 16 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating current of 10mA/MHz (typ.) and a min

文件：436.06 Kbytes 页数：8 Pages

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262,144-WORD BY 16-BIT STATIC RAM

文件：478.98 Kbytes 页数：11 Pages

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262,144-WORD BY 16-BIT STATIC RAM

DESCRIPTION The TC554161FTL is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by 16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5 V ± 10 power supply. Advanced circuit technology provides both high spee

文件：439.34 Kbytes 页数：9 Pages

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东芝

262,144 WORD x 16 BIT STATIC RAM

Description The TC554161FTL/TRL is a 4,194,304 bit CMOS static random access memory organized as 262,144 words by 16 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating current of 10mA/MHz (typ.) and a min

文件：436.06 Kbytes 页数：8 Pages

TOSHIBA

东芝

262,144-WORD BY 16-BIT STATIC RAM

DESCRIPTION The TC554161FTL is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by 16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5 V ± 10 power supply. Advanced circuit technology provides both high spee

文件：439.34 Kbytes 页数：9 Pages

TOSHIBA

东芝

262,144 WORD x 16 BIT STATIC RAM

Description The TC554161FTL/TRL is a 4,194,304 bit CMOS static random access memory organized as 262,144 words by 16 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating current of 10mA/MHz (typ.) and a min

文件：436.06 Kbytes 页数：8 Pages

TOSHIBA

东芝

262,144-WORD BY 16-BIT STATIC RAM

DESCRIPTION The TC554161FTL is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by 16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5 V ± 10 power supply. Advanced circuit technology provides both high spee

文件：439.34 Kbytes 页数：9 Pages

TOSHIBA

东芝

262,144 WORD x 16 BIT STATIC RAM

Description The TC554161FTL/TRL is a 4,194,304 bit CMOS static random access memory organized as 262,144 words by 16 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating current of 10mA/MHz (typ.) and a min

文件：436.06 Kbytes 页数：8 Pages

TOSHIBA

东芝

262,144-WORD BY 16-BIT STATIC RAM

DESCRIPTION The TC554161FTL is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by 16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5 V ± 10 power supply. Advanced circuit technology provides both high spee

文件：439.34 Kbytes 页数：9 Pages

TOSHIBA

东芝

262,144 WORD x 16 BIT STATIC RAM

Description The TC554161FTL/TRL is a 4,194,304 bit CMOS static random access memory organized as 262,144 words by 16 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating current of 10mA/MHz (typ.) and a min

文件：436.06 Kbytes 页数：8 Pages

TOSHIBA

东芝