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TC551001BTRL

131,072-WORD BY 8-BIT STATIC RAM

DESCRIPTION The TC551001BPL/BFL/BFTL/BTRL is a 1,048,576-bit static random access memory (SRAM) organized as 131,072 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5 V ± 10 power supply. Advanced circuit technology provides b

文件:354.25 Kbytes 页数:12 Pages

TOSHIBA

东芝

TC551001BTRL

131,072-WORD BY 8-BIT STATIC RAM

DESCRIPTION The TC551001BPL/BFL/BFTL/BTRL is a 1,048,576-bit static random access memory (SRAM) organized as 131,072 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5 V ± 10 power supply. Advanced circuit technology provides b

文件:355.18 Kbytes 页数:12 Pages

TOSHIBA

东芝

TC551001BTRL-10

131,072-WORD BY 8-BIT STATIC RAM

DESCRIPTION The TC551001BPL/BFL/BFTL/BTRL is a 1,048,576-bit static random access memory (SRAM) organized as 131,072 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5 V ± 10 power supply. Advanced circuit technology provides b

文件:354.25 Kbytes 页数:12 Pages

TOSHIBA

东芝

TC551001BTRL-10L

131,072-WORD BY 8-BIT STATIC RAM

DESCRIPTION The TC551001BPL/BFL/BFTL/BTRL is a 1,048,576-bit static random access memory (SRAM) organized as 131,072 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5 V ± 10 power supply. Advanced circuit technology provides b

文件:355.18 Kbytes 页数:12 Pages

TOSHIBA

东芝

TC551001BTRL-70

131,072-WORD BY 8-BIT STATIC RAM

DESCRIPTION The TC551001BPL/BFL/BFTL/BTRL is a 1,048,576-bit static random access memory (SRAM) organized as 131,072 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5 V ± 10 power supply. Advanced circuit technology provides b

文件:354.25 Kbytes 页数:12 Pages

TOSHIBA

东芝

TC551001BTRL-70L

131,072-WORD BY 8-BIT STATIC RAM

DESCRIPTION The TC551001BPL/BFL/BFTL/BTRL is a 1,048,576-bit static random access memory (SRAM) organized as 131,072 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5 V ± 10 power supply. Advanced circuit technology provides b

文件:355.18 Kbytes 页数:12 Pages

TOSHIBA

东芝

TC551001BTRL-85

131,072-WORD BY 8-BIT STATIC RAM

DESCRIPTION The TC551001BPL/BFL/BFTL/BTRL is a 1,048,576-bit static random access memory (SRAM) organized as 131,072 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5 V ± 10 power supply. Advanced circuit technology provides b

文件:354.25 Kbytes 页数:12 Pages

TOSHIBA

东芝

TC551001BTRL-85L

131,072-WORD BY 8-BIT STATIC RAM

DESCRIPTION The TC551001BPL/BFL/BFTL/BTRL is a 1,048,576-bit static random access memory (SRAM) organized as 131,072 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5 V ± 10 power supply. Advanced circuit technology provides b

文件:355.18 Kbytes 页数:12 Pages

TOSHIBA

东芝

TC551001BTRL-70L

SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM

文件:584.22 Kbytes 页数:13 Pages

TOSHIBA

东芝

TC551001BTRL-85L

SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM

文件:584.22 Kbytes 页数:13 Pages

TOSHIBA

东芝

详细参数

  • 型号:

    TC551001BTRL

  • 制造商:

    TOSHIBA

  • 制造商全称:

    Toshiba Semiconductor

  • 功能描述:

    SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM

供应商型号品牌批号封装库存备注价格
24+
2500
自己现货
询价
TOS
96+
TSOP/32
430
原装现货海量库存欢迎咨询
询价
TOS
22+
TSOP32
8200
原装现货库存.价格优势
询价
TOSHIBA/东芝
20+
TSSOP
35830
原装优势主营型号-可开原型号增税票
询价
TOSHIBA/东芝
2447
TSSOP
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
Toshiba
25+
2
公司优势库存 热卖中!!
询价
TOSHIBA/东芝
23+
NA
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
TOSHIBA
22+
TSSOP
3000
原装正品,支持实单
询价
TOS
TSOP32
68500
一级代理 原装正品假一罚十价格优势长期供货
询价
TOSHIBA
2025+
TSSOP32
3720
全新原厂原装产品、公司现货销售
询价
更多TC551001BTRL供应商 更新时间2026-1-30 16:01:00