4,194,304 WORD BY 1-BIT/1,048,576 WORD BY 4 BIT CMOS STATIC RAM

DESCRIPTION The TC551402J is a 4,194,304-bit high speed static random access memory (SRAM), it is possible to change the organization between 4,194,304 words by 1 bit and 1,048,576 words by 4 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it operates

文件：343.13 Kbytes 页数：7 Pages

TOSHIBA

东芝

4,194,304 WORD x 1 BIT/1,048,576 WORD x 4 BIT CMOS STATIC RAM

Description The TC551402J is a 4,194,304 bit high speed CMOS static random access memory that is configurable to an organization of either 4,194,304 words by 1 bit or 1,048,576 words by 4 bits when power is initially applied to the device. The mode (x1/x4) is selected by the input level of pin

文件：347.17 Kbytes 页数：6 Pages

TOSHIBA

东芝

4,194,304 WORD x 1 BIT/1,048,576 WORD x 4 BIT CMOS STATIC RAM

Description The TC551402J is a 4,194,304 bit high speed CMOS static random access memory that is configurable to an organization of either 4,194,304 words by 1 bit or 1,048,576 words by 4 bits when power is initially applied to the device. The mode (x1/x4) is selected by the input level of pin

文件：347.17 Kbytes 页数：6 Pages

TOSHIBA

东芝

4,194,304 WORD x 1 BIT/1,048,576 WORD x 4 BIT CMOS STATIC RAM

Description The TC551402J is a 4,194,304 bit high speed CMOS static random access memory that is configurable to an organization of either 4,194,304 words by 1 bit or 1,048,576 words by 4 bits when power is initially applied to the device. The mode (x1/x4) is selected by the input level of pin

文件：347.17 Kbytes 页数：6 Pages

TOSHIBA

东芝

4,194,304 WORD BY 1-BIT/1,048,576 WORD BY 4 BIT CMOS STATIC RAM

DESCRIPTION The TC551402J is a 4,194,304-bit high speed static random access memory (SRAM), it is possible to change the organization between 4,194,304 words by 1 bit and 1,048,576 words by 4 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it operates

文件：343.13 Kbytes 页数：7 Pages

TOSHIBA

东芝

4,194,304 WORD x 1 BIT/1,048,576 WORD x 4 BIT CMOS STATIC RAM

Description The TC551402J is a 4,194,304 bit high speed CMOS static random access memory that is configurable to an organization of either 4,194,304 words by 1 bit or 1,048,576 words by 4 bits when power is initially applied to the device. The mode (x1/x4) is selected by the input level of pin

文件：347.17 Kbytes 页数：6 Pages

TOSHIBA

东芝

4,194,304 WORD BY 1-BIT/1,048,576 WORD BY 4 BIT CMOS STATIC RAM

DESCRIPTION The TC551402J is a 4,194,304-bit high speed static random access memory (SRAM), it is possible to change the organization between 4,194,304 words by 1 bit and 1,048,576 words by 4 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it operates

文件：343.13 Kbytes 页数：7 Pages

TOSHIBA

东芝

4,194,304 WORD x 1 BIT/1,048,576 WORD x 4 BIT CMOS STATIC RAM

Description The TC551402J is a 4,194,304 bit high speed CMOS static random access memory that is configurable to an organization of either 4,194,304 words by 1 bit or 1,048,576 words by 4 bits when power is initially applied to the device. The mode (x1/x4) is selected by the input level of pin

文件：347.17 Kbytes 页数：6 Pages

TOSHIBA

东芝

4,194,304 WORD BY 1-BIT/1,048,576 WORD BY 4 BIT CMOS STATIC RAM

Toshiba

东芝