1關A LOW DROPOUT POSITIVE VOLTAGE REGULATOR

GENERAL DESCRIPTION The TC55 Series is a family of CMOS low dropout positive voltage regulators which can source up to 250mA of current. The extremely low operating current (1.1µA typical) makes this part the ideal choice for battery operated applications and eliminates the need for an addition

文件：72.26 Kbytes 页数：9 Pages

Microchip

微芯科技

Axial Leaded Aluminum Electrolytic Capacitors

85 ºC, High Ripple, General Purpose Capacitor Type TC is an axial leaded, 85 ºC, 1000 hour long life general purpose aluminum electrolytic capacitor with a high ripple current rating and is suitable for consumer electronic equipment applications. Highlights • General purpose • High ripple curr

文件：152.09 Kbytes 页数：2 Pages

CDE

LOW DROPOUT POSITIVE VOLTAGE REGULATOR

GENERAL DESCRIPTION The TC55 Series is a collection of CMOS low dropout positive voltage regulators which can source up to 250mA of current with an extremely low input-output voltage differential of 380mV. FEATURES ■ Very Low Dropout Voltage .... 120mV typ at 100mA

文件：50.11 Kbytes 页数：3 Pages

TELCOM

256 WORD x 4 BIT CMOS RAM

DESCRIPTION The TC5501P/D is a fully static read write memory organized as 256 words by 4 bits using CMOS tech- nology. Because of ultra low power dissipation, the TC5501P/D can be used as battery operated portable memory system and also as a nonvolatile memory with battery back up. The TC

文件：156.3 Kbytes 页数：8 Pages

TOSHIBA

东芝

256 WORD x 4 BIT CMOS RAM

DESCRIPTION The TC5501P/D is a fully static read write memory organized as 256 words by 4 bits using CMOS tech- nology. Because of ultra low power dissipation, the TC5501P/D can be used as battery operated portable memory system and also as a nonvolatile memory with battery back up. The TC

文件：156.3 Kbytes 页数：8 Pages

TOSHIBA

东芝

256 WORD x 4 BIT CMOS RAM

DESCRIPTION The TC5501P/D is a fully static read write memory organized as 256 words by 4 bits using CMOS tech- nology. Because of ultra low power dissipation, the TC5501P/D can be used as battery operated portable memory system and also as a nonvolatile memory with battery back up. The TC

文件：156.3 Kbytes 页数：8 Pages

TOSHIBA

东芝

256 WORD x 4 BIT CMOS RAM

DESCRIPTION The TC5501P/D is a fully static read write memory organized as 256 words by 4 bits using CMOS tech- nology. Because of ultra low power dissipation, the TC5501P/D can be used as battery operated portable memory system and also as a nonvolatile memory with battery back up. The TC

文件：156.3 Kbytes 页数：8 Pages

TOSHIBA

东芝

131,072 WORD x 8 BIT STATIC RAM

Description The TC551001API is a 1,048,576 bit CMOS static random access memory organized as 131,072 words by 8 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating cur- rent of 5mA/MHz (typ.) and a minimum

文件：453.86 Kbytes 页数：8 Pages

TOSHIBA

东芝

131,072 WORD x 8 BIT STATIC RAM

Description The TC551001API is a 1,048,576 bit CMOS static random access memory organized as 131,072 words by 8 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating cur- rent of 5mA/MHz (typ.) and a minimum

文件：441.17 Kbytes 页数：8 Pages

TOSHIBA

东芝

131,072 WORD x 8 BIT STATIC RAM

Description The TC551001API is a 1,048,576 bit CMOS static random access memory organized as 131,072 words by 8 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating cur- rent of 5mA/MHz (typ.) and a minimum

文件：441.17 Kbytes 页数：8 Pages

TOSHIBA

东芝