零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
TC55 | LOW DROPOUT POSITIVE VOLTAGE REGULATOR GENERALDESCRIPTION TheTC55SeriesisacollectionofCMOSlowdropoutpositivevoltageregulatorswhichcansourceupto250mAofcurrentwithanextremelylowinput-outputvoltagedifferentialof380mV. FEATURES ■VeryLowDropoutVoltage....120mVtypat100mA | TELCOM TELCOM | TELCOM | |
TC55 | 1關A LOW DROPOUT POSITIVE VOLTAGE REGULATOR GENERALDESCRIPTION TheTC55SeriesisafamilyofCMOSlowdropoutpositivevoltageregulatorswhichcansourceupto250mAofcurrent.Theextremelylowoperatingcurrent(1.1µAtypical)makesthisparttheidealchoiceforbatteryoperatedapplicationsandeliminatestheneedforanaddition | MicrochipMicrochip Technology Inc. 微芯科技微芯科技股份有限公司 | Microchip | |
TC55 | Axial Leaded Aluminum Electrolytic Capacitors 85ºC,HighRipple,GeneralPurposeCapacitor TypeTCisanaxialleaded,85ºC,1000hourlonglifegeneralpurposealuminumelectrolyticcapacitorwithahighripplecurrentratingandissuitableforconsumerelectronicequipmentapplications. Highlights •Generalpurpose •Highripplecurr | CDE Cornell Dubilier Electronics | CDE | |
TC55 | 包装:散装 封装/外壳:轴向,CAN 类别:电容器 铝电解电容器 描述:CAP ALUM 20UF 250V AXIAL | CDE Cornell Dubilier Electronics | CDE | |
256 WORD x 4 BIT CMOS RAM DESCRIPTION TheTC5501P/Disafullystaticreadwritememory organizedas256wordsby4bitsusingCMOStech- nology.Becauseofultralowpowerdissipation,the TC5501P/Dcanbeusedasbatteryoperatedportable memorysystemandalsoasanonvolatilememory withbatterybackup.TheTC | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
256 WORD x 4 BIT CMOS RAM DESCRIPTION TheTC5501P/Disafullystaticreadwritememory organizedas256wordsby4bitsusingCMOStech- nology.Becauseofultralowpowerdissipation,the TC5501P/Dcanbeusedasbatteryoperatedportable memorysystemandalsoasanonvolatilememory withbatterybackup.TheTC | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
256 WORD x 4 BIT CMOS RAM DESCRIPTION TheTC5501P/Disafullystaticreadwritememory organizedas256wordsby4bitsusingCMOStech- nology.Becauseofultralowpowerdissipation,the TC5501P/Dcanbeusedasbatteryoperatedportable memorysystemandalsoasanonvolatilememory withbatterybackup.TheTC | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
256 WORD x 4 BIT CMOS RAM DESCRIPTION TheTC5501P/Disafullystaticreadwritememory organizedas256wordsby4bitsusingCMOStech- nology.Becauseofultralowpowerdissipation,the TC5501P/Dcanbeusedasbatteryoperatedportable memorysystemandalsoasanonvolatilememory withbatterybackup.TheTC | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
131,072 WORD x 8 BIT STATIC RAM Description TheTC551001APIisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
131,072 WORD x 8 BIT STATIC RAM Description TheTC551001APIisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
131,072 WORD x 8 BIT STATIC RAM Description TheTC551001APIisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
131,072 WORD x 8 BIT STATIC RAM Description TheTC551001APIisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
131,072 WORD x 8 BIT STATIC RAM Description TheTC551001APIisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
131,072 WORD x 8 BIT STATIC RAM Description TheTC551001APIisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
131,072 WORD x 8 BIT STATIC RAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
131,072 WORD x 8 BIT STATIC RAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
131,072 WORD x 8 BIT STATIC RAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
131,072 WORD x 8 BIT STATIC RAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
131,072 WORD x 8 BIT STATIC RAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
131,072 WORD x 8 BIT STATIC RAM Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA |
替换型号
产品属性
- 产品编号:
TC55
- 制造商:
Cornell Dubilier Electronics (CDE)
- 类别:
电容器 > 铝电解电容器
- 系列:
TC
- 包装:
散装
- 容差:
-10%,+50%
- ESR(等效串联电阻):
6.13 欧姆 @ 120Hz
- 不同温度时使用寿命:
85°C 时为 1000 小时
- 工作温度:
-40°C ~ 85°C
- 极化:
极化
- 应用:
通用
- 大小 / 尺寸:
0.750" 直径 x 1.125" 长(19.05mm x 28.58mm)
- 安装类型:
通孔
- 封装/外壳:
轴向,
- 描述:
CAP ALUM 20UF 250V AXIAL
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Cornell-Dubilier |
新 |
5 |
全新原装 货期两周 |
询价 | |||
Cornell-Dubilier |
2022+ |
1 |
全新原装 货期两周 |
询价 | |||
TOSHIBA/东芝 |
22+ |
TSOP |
9609 |
只有原装 低价 实单必成 |
询价 | ||
TOSHIBA/东芝 |
23+ |
TSOP32 |
10000 |
全新原装现货库存 |
询价 | ||
TOSHIBA |
三年内 |
1983 |
纳立只做原装正品13590203865 |
询价 | |||
TOSHIBA |
20+ |
SOP |
2960 |
诚信交易大量库存现货 |
询价 | ||
TOSHIBA/东芝 |
21+ |
SOP28 |
6000 |
只做原装 |
询价 | ||
TOSHIBA/东芝 |
2339+ |
SOP32 |
32280 |
原装现货 假一罚十!十年信誉只做原装! |
询价 | ||
TOSHIBA-东芝 |
24+25+/26+27+ |
SOP |
36200 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
TELCOM |
23+24 |
SOT89 |
28950 |
专营原装正品SMD二三极管,电源IC |
询价 |
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