首页 >TC55>规格书列表

零件编号下载&订购功能描述制造商&上传企业LOGO

TC55

LOW DROPOUT POSITIVE VOLTAGE REGULATOR

GENERALDESCRIPTION TheTC55SeriesisacollectionofCMOSlowdropoutpositivevoltageregulatorswhichcansourceupto250mAofcurrentwithanextremelylowinput-outputvoltagedifferentialof380mV. FEATURES ■VeryLowDropoutVoltage....120mVtypat100mA

TELCOM

TELCOM

TC55

1關A LOW DROPOUT POSITIVE VOLTAGE REGULATOR

GENERALDESCRIPTION TheTC55SeriesisafamilyofCMOSlowdropoutpositivevoltageregulatorswhichcansourceupto250mAofcurrent.Theextremelylowoperatingcurrent(1.1µAtypical)makesthisparttheidealchoiceforbatteryoperatedapplicationsandeliminatestheneedforanaddition

MicrochipMicrochip Technology Inc.

微芯科技微芯科技股份有限公司

TC55

Axial Leaded Aluminum Electrolytic Capacitors

85ºC,HighRipple,GeneralPurposeCapacitor TypeTCisanaxialleaded,85ºC,1000hourlonglifegeneralpurposealuminumelectrolyticcapacitorwithahighripplecurrentratingandissuitableforconsumerelectronicequipmentapplications. Highlights •Generalpurpose •Highripplecurr

CDE

Cornell Dubilier Electronics

TC55

包装:散装 封装/外壳:轴向,CAN 类别:电容器 铝电解电容器 描述:CAP ALUM 20UF 250V AXIAL

CDE

Cornell Dubilier Electronics

TC5501D

256 WORD x 4 BIT CMOS RAM

DESCRIPTION TheTC5501P/Disafullystaticreadwritememory organizedas256wordsby4bitsusingCMOStech- nology.Becauseofultralowpowerdissipation,the TC5501P/Dcanbeusedasbatteryoperatedportable memorysystemandalsoasanonvolatilememory withbatterybackup.TheTC

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TC5501D-1

256 WORD x 4 BIT CMOS RAM

DESCRIPTION TheTC5501P/Disafullystaticreadwritememory organizedas256wordsby4bitsusingCMOStech- nology.Becauseofultralowpowerdissipation,the TC5501P/Dcanbeusedasbatteryoperatedportable memorysystemandalsoasanonvolatilememory withbatterybackup.TheTC

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TC5501P

256 WORD x 4 BIT CMOS RAM

DESCRIPTION TheTC5501P/Disafullystaticreadwritememory organizedas256wordsby4bitsusingCMOStech- nology.Becauseofultralowpowerdissipation,the TC5501P/Dcanbeusedasbatteryoperatedportable memorysystemandalsoasanonvolatilememory withbatterybackup.TheTC

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TC5501P-1

256 WORD x 4 BIT CMOS RAM

DESCRIPTION TheTC5501P/Disafullystaticreadwritememory organizedas256wordsby4bitsusingCMOStech- nology.Becauseofultralowpowerdissipation,the TC5501P/Dcanbeusedasbatteryoperatedportable memorysystemandalsoasanonvolatilememory withbatterybackup.TheTC

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TC551001AFI

131,072 WORD x 8 BIT STATIC RAM

Description TheTC551001APIisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TC551001AFI

131,072 WORD x 8 BIT STATIC RAM

Description TheTC551001APIisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TC551001AFI-10

131,072 WORD x 8 BIT STATIC RAM

Description TheTC551001APIisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TC551001AFI-10L

131,072 WORD x 8 BIT STATIC RAM

Description TheTC551001APIisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TC551001AFI-85

131,072 WORD x 8 BIT STATIC RAM

Description TheTC551001APIisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TC551001AFI-85L

131,072 WORD x 8 BIT STATIC RAM

Description TheTC551001APIisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TC551001AFL

131,072 WORD x 8 BIT STATIC RAM

Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TC551001AFL

131,072 WORD x 8 BIT STATIC RAM

Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TC551001AFL-10

131,072 WORD x 8 BIT STATIC RAM

Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TC551001AFL-10L

131,072 WORD x 8 BIT STATIC RAM

Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TC551001AFL-10LT

131,072 WORD x 8 BIT STATIC RAM

Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TC551001AFL-10LV

131,072 WORD x 8 BIT STATIC RAM

Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

产品属性

  • 产品编号:

    TC55

  • 制造商:

    Cornell Dubilier Electronics (CDE)

  • 类别:

    电容器 > 铝电解电容器

  • 系列:

    TC

  • 包装:

    散装

  • 容差:

    -10%,+50%

  • ESR(等效串联电阻):

    6.13 欧姆 @ 120Hz

  • 不同温度时使用寿命:

    85°C 时为 1000 小时

  • 工作温度:

    -40°C ~ 85°C

  • 极化:

    极化

  • 应用:

    通用

  • 大小 / 尺寸:

    0.750" 直径 x 1.125" 长(19.05mm x 28.58mm)

  • 安装类型:

    通孔

  • 封装/外壳:

    轴向,

  • 描述:

    CAP ALUM 20UF 250V AXIAL

供应商型号品牌批号封装库存备注价格
Cornell-Dubilier
5
全新原装 货期两周
询价
Cornell-Dubilier
2022+
1
全新原装 货期两周
询价
TOSHIBA/东芝
22+
TSOP
9609
只有原装 低价 实单必成
询价
TOSHIBA/东芝
23+
TSOP32
10000
全新原装现货库存
询价
TOSHIBA
三年内
1983
纳立只做原装正品13590203865
询价
TOSHIBA
20+
SOP
2960
诚信交易大量库存现货
询价
TOSHIBA/东芝
21+
SOP28
6000
只做原装
询价
TOSHIBA/东芝
2339+
SOP32
32280
原装现货 假一罚十!十年信誉只做原装!
询价
TOSHIBA-东芝
24+25+/26+27+
SOP
36200
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
TELCOM
23+24
SOT89
28950
专营原装正品SMD二三极管,电源IC
询价
更多TC55供应商 更新时间2024-5-8 16:06:00