131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM

Description The TC518129B is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129B utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129B operates from a sing

文件：548.07 Kbytes 页数：9 Pages

TOSHIBA

东芝

131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM

Description The TC518129B-V is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129B-V utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129B-V operates from

文件：477.27 Kbytes 页数：14 Pages

TOSHIBA

东芝

131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM

Description The TC518129B is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129B utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129B operates from a sing

文件：548.07 Kbytes 页数：9 Pages

TOSHIBA

东芝

TSOP

TOSHIBA/东芝

上传：深圳市亿顺芯科技有限公司

TSOP

TOSHIBA/东芝

上传：深圳市亿顺芯科技有限公司