32,768 WORD x 16 BIT CMOS PSEUDO STATIC RAM

Description The TC511632FL/FTL is a 512K bit high speed CMOS pseudo static RAM organized as 32,768 words by 16 bits. The TC511632FL/FTL, utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC511632FL/FTL op

文件：631.54 Kbytes 页数：13 Pages

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东芝

32,768 WORD x 16 BIT CMOS PSEUDO STATIC RAM

Description The TC511632FL/FTL is a 512K bit high speed CMOS pseudo static RAM organized as 32,768 words by 16 bits. The TC511632FL/FTL, utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC511632FL/FTL op

文件：631.54 Kbytes 页数：13 Pages

TOSHIBA

东芝

32,768 WORD x 16 BIT CMOS PSEUDO STATIC RAM

Description The TC511632FL/FTL is a 512K bit high speed CMOS pseudo static RAM organized as 32,768 words by 16 bits. The TC511632FL/FTL, utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC511632FL/FTL op

文件：631.54 Kbytes 页数：13 Pages

TOSHIBA

东芝

32,768 WORD x 16 BIT CMOS PSEUDO STATIC RAM

Description The TC511632FL/FTL is a 512K bit high speed CMOS pseudo static RAM organized as 32,768 words by 16 bits. The TC511632FL/FTL, utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC511632FL/FTL op

文件：631.54 Kbytes 页数：13 Pages

TOSHIBA

东芝

32,768 WORD x 16 BIT CMOS PSEUDO STATIC RAM

Description The TC511632FL/FTL is a 512K bit high speed CMOS pseudo static RAM organized as 32,768 words by 16 bits. The TC511632FL/FTL, utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC511632FL/FTL op

文件：631.54 Kbytes 页数：13 Pages

TOSHIBA

东芝

4,194,304 WORD X 4 BIT DYNAMIC RAM

Description The TC5116400BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bit. The TC5116400BSJ/BST utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Mu

文件：442.34 Kbytes 页数：8 Pages

TOSHIBA

东芝

4,194,304 WORD X 4 BIT DYNAMIC RAM

Description The TC5116400BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bit. The TC5116400BSJ/BST utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Mu

文件：442.34 Kbytes 页数：8 Pages

TOSHIBA

东芝

4,194,304 WORD X 4 BIT DYNAMIC RAM

Description The TC5116400BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bit. The TC5116400BSJ/BST utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Mu

文件：442.34 Kbytes 页数：8 Pages

TOSHIBA

东芝

4,194,304 WORD X 4 BIT DYNAMIC RAM

Description The TC5116400BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bit. The TC5116400BSJ/BST utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Mu

文件：442.34 Kbytes 页数：8 Pages

TOSHIBA

东芝

4,194,304 WORD X 4 BIT DYNAMIC RAM

Description The TC5116400BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bit. The TC5116400BSJ/BST utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Mu

文件：442.34 Kbytes 页数：8 Pages

TOSHIBA

东芝