TG2520SMN

HighStablityLownoise

TGA2520

12-16GHzHighLinearityAmplifier

ProductDescription TheTriQuintTGA2520MMICisanextremelylinear,highgainamplifier,capableof1WattoutputpoweratP1dBforthefrequencyrangeof12–16GHz.ThisperformancemakesthisamplifierideallysuitedforPointtoPointRadiosandcurrentKu-Bandsatellitegroundterminal

TP2520

P-ChannelEnhancement-ModeVerticalDMOSFETs

LowThresholdDMOSTechnology Theselowthresholdenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertexswell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththe

TP2520

P-ChannelEnhancementModeVerticalDMOSFETs

TSL2520

HighlySensitiveAmbientLightSensor

Features •Configurable,highsensitivity •Programmablegainandintegrationtime •4096xdynamicrangebygainadjustmentonly •1mluxdetectableilluminance •TailoredALSresponse •UV/IRblockingfilterforClearchannel •ALSinterruptwiththresholds •Flicker-immuneALSsensingwit

TZ2520A

GlassSMD3.2x2.530MHzCrystalUnit

Features: SurfaceMountHermeticPackage ExcellentReliabilityPerformance GoodFrequencyPerturbationandStabilityovertemperature UltraMiniaturePackage DescriptionandApplications: Surfacemount3.2mmx2.5mmcrystalunitforuseinwirelesscommunicationsdevices, especiallyforan

UMUR2520

SUPERFASTRECOVERYRECTIFIER

UPA2520

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION TheμPA2520isN-channelMOSFieldEffectTransistor designedforDC/DCconverterandpowermanagement applicationsofportableequipments. FEATURES •Lowon-stateresistance RDS(on)1=13.2mΩMAX.(VGS=10V,ID=10A) RDS(on)2=17mΩMAX.(VGS=4.5V,ID=5.0A) •Buil

V2520SM

UltraLowphasenoiseVCOwithbuilt-inbufferamplifier

V2520TO

UltraLowphasenoiseVCOwithbuilt-inbufferamplifier