TDP142

TDP142-Q1DisplayPort™8.1GbpsLinearRedriver

1Features •AEC-Q100qualifiedforautomotiveapplications: –Temperature:–40°Cto105°C,TA •DisplayPort™1.4upto8.1Gbps(HBR3) •Ultra-low-powerarchitecture •Linearredriverwithupto12dBat4.05GHz equalization •TransparenttoDisplayPort™linktraining •Configurationthroug

TDP142I

DisplayPort8.1GbpsLinearRedriver

TDP142IRNQR

DisplayPort8.1GbpsLinearRedriver

TDP142IRNQT

DisplayPort8.1GbpsLinearRedriver

TDP142RNQR

DisplayPort8.1GbpsLinearRedriver

TDP142RNQT

DisplayPort8.1GbpsLinearRedriver

TIP142

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •HighDCCurrentGain:hFE=1000@VCE=4V,IC=5A(Min.) •IndustrialUse •ComplementtoTIP145/146/147

TIP142

NPNEPITAXIALSILICONDARLINGTONTRANSISTOR(HIGHDCCURRENTGAIN)

HIGHDCCURRENTGAIN •ComplementarytoTIP145/146/147

TIP142

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

DESCRIPTION TheTIP140,TIP141andTIP142aresiliconepitaxial-baseNPNpowertransistorsinmonolithicDarlingtonconfigurationandaremountedinTO-218plasticpackage.Theyareintentedforuseinpowerlinearandswitchingapplications. ThecomplementaryPNPtypesareTIP145,TIP146andTI

TIP142

DARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS

DarlingtonComplementarySiliconPowerTransistors Designedforgeneral−purposeamplifierandlowfrequencyswitchingapplications. Features •HighDCCurrentGain− MinhFE=1000@IC =5.0A,VCE=4V •Collector−EmitterSustainingVoltage−@30mA