TC11

Max. output 32V DC, 6A

GeneralFeatures Numberofmotors1 Max.output32VDC,6A Built-intransformertypeSMPS PlugsupportEU,USA,AUS,UK,orJPN CertificateUL508,PSE,SAA,EMC ColorBlack Operationaltemperaturerange+5°C~+45°C 0.1Wstandbypowerconsumption Compactdesignforheightadjustabledesks

TC11

包装：盒 类别：计算机设备 监控器，监视器 描述：TC11 11\

Lilliput Electronics (USA) Inc.

TC11

包装：盒 类别：计算机设备 监控器，监视器 描述：TC11 11\

Lilliput Electronics (USA) Inc.

TC110

PFM/PWM Step-Up DC/DC Controller

GeneralDescription TheTC110isastep-up(Boost)switchingcontrollerthatfurnishesoutputcurrentsofupto300mAwhiledeliveringatypicalefficiencyof84.TheTC110normallyoperatesinpulsewidthmodulationmode(PWM),butautomaticallyswitchestopulsefrequencymodulation(PFM)atlo

TC1100H

SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE

Bi-Directional VDRM-58to320Volts IPP-100Amperes FEATURES ●OxideGlassPassivatedJunction ●Bidirectionalprotectioninasingledevice ●Surgecapabilitiesupto100A@10/1000usor400@8/20us ●HighoffstateImpedanceandlowonstatevoltage ●PlasticmaterialhasULflammab

TC1101

Low Noise and Medium Power GaAs FETs

[TRANSCOM] DESCRIPTION TheTC1101isaGaAsPseudomorphicHighElectronMobilityTransistor(PHEMT)chip,whichhasverylownoisefigure,highassociatedgainandhighdynamicrange.Thedevicecanbeusedincircuitsupto40GHzandsuitableforlownoiseandmediumpoweramplifierapplicatio

TC1101

Low Noise and Medium Power GaAs FETs

DESCRIPTION TheTC1101isaGaAsPseudomorphicHighElectronMobilityTransistor(PHEMT)chip,whichhasverylownoisefigure,highassociatedgainandhighdynamicrange.Thedevicecanbeusedincircuitsupto30GHzandsuitableforlownoiseandmediumpoweramplifierapplicationsincluding

TC1101V

Low Noise and Medium Power GaAs FETs

DESCRIPTION TheTC1101VisthesameasTC1101expectviaholesinthesourcepadsforreducingthegroundinginductance.Itcanbeusedincircuitsupto30GHzandsuitableforlownoiseandmediumpoweramplifierapplicationincludingawiderangeofcommercialandmilitaryapplication.Alld

TC1102

SMD Telecoil 10.5x1.4x2mm

TC1102

Super Low Noise GaAs FETs

DESCRIPTION TheTC1102isaGaAsPseudomorphicHighElectronMobilityTransistor(PHEMT)chip,whichhasverylownoisefigureandhighassociatedgain.Thedevicecanbeusedincircuitsupto30GHzandsuitableforlownoiseapplicationincludingawiderangeofcommercialandmilitaryapplica