首页 >TBL6202PR>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
TMUX620x36V,Low-RON,1:1(SPST),1-ChannelPrecisionSwitchWith1.8-VLogic 1Features •Dualsupplyrange:±4.5Vto±18V •Singlesupplyrange:4.5Vto36V •Lowon-resistance:1.2Ω •Lowchargeinjection:−10pC •–40°Cto+125°Coperatingtemperature •IntegratedPull-Downresistoronlogicpins •1.8Vlogiccompatible •Fail-safelogic •Rail-to-railope | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
TMUX620x36V,Low-RON,1:1(SPST),1-ChannelPrecisionSwitchWith1.8-VLogic 1Features •Dualsupplyrange:±4.5Vto±18V •Singlesupplyrange:4.5Vto36V •Lowon-resistance:1.2Ω •Lowchargeinjection:−10pC •–40°Cto+125°Coperatingtemperature •IntegratedPull-Downresistoronlogicpins •1.8Vlogiccompatible •Fail-safelogic •Rail-to-railope | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
GaAlAsInfraredEmittingDiodesinø5mm(T–13/4)Package | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
InfraredEmittingDiode,RoHSCompliant,875nm,GaAlAs | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
InfraredEmittingDiode,875nm,GaAlAs | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
InfraredEmittingDiode DESCRIPTION TheTSHA620.seriesareinfrared,875nmemittingdiodesinGaAlAstechnology,moldedinaclear,untintedplasticpackage. FEATURES •Packagetype:leaded •Packageform:T-1¾ •Dimensions(inmm):Ø5 •Peakwavelength:λp=875nm •Highreliability •Angleofhalfintensity | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
InfraredEmittingDiode,875nm,GaAlAs DESCRIPTION TheTSHA620.seriesareinfrared,875nmemittingdiodesin GaAlAstechnology,moldedinaclear,untintedplastic package. FEATURES •Packagetype:leaded •Packageform:T-1¾ •Dimensions(inmm):Ø5 •Peakwavelength:λp=875nm •Highreliability •Angleofhalfinten | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
InfraredEmittingDiode,875nm,GaAlAs | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
InfraredEmittingDiode,950nm,GaAs | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PINDIODE DESCRIPTION TheseseriesofPINdiodesaredesignedforapplicationsrequiringsmallpackagesizeandmoderateaveragepowerhandlingcapability.ThelowcapacitanceoftheUM6000andUM6600allowsthemtobeusedasseriesswitchingelementsto1GHz.ThelowresistanceoftheUM6200isuseful | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi |
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