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BR1002

SiliconBridgeRectifiers

VOLTAGERANGE:50---1000VCURRENT:10.0A Features ◇Ratingto1000VPRV ◇Surgeoverloadratingto200Amperespeak ◇Idealforprintedcircuitboard ◇Reliablelowcostconstructionutilizingmoldedplastictechniqueresultsininexpensiveproduct ◇LeadsolderableperMIL-STD-202metho

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

BR1002

BridgeRectifier

10.0ASiliconPassivatedSingle-PhaseBridgeRectifiers-50-1000V Features ●Surgeoverloadrating240amperespeak ●Lowforwardvoltagedrop ●Smallsize;simpleinstallation ●Sliverplatedcopperleads ●Lead-freepartsmeetRoHSrequirments. ●Suffix-HindicatesHalogen-freepart,ex.B

FORMOSAFormosa MS

美丽微半导体美丽微半导体股份有限公司

BR1002

SILICONBRIDGERECTIFIERS

HYyueqing hongyi electronics co.,ltd

宏一乐清市宏一电子有限公司

BR1002

SILICONBRIDGERECTIFIERS

VOLTAGERANGE:50---1000VCURRENT:10.0A FEATURES ◇Ratingto1000VPRV ◇Surgeoverloadratingto125Amperespeak ◇Idealforprintedcircuitboard ◇Reliablelowcostconstructionutilizingmoldedplastictechniqueresultsininexpensiveproduct ◇Mounting:thruholefor#6screwMou

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BR1002

SILICONBRIDGERECTIFIERS

VOLTAGERANGE:50---1000VCURRENT:10.0A FEATURES ◇Ratingto1000VPRV ◇Surgeoverloadratingto125Amperespeak ◇Idealforprintedcircuitboard ◇Reliablelowcostconstructionutilizingmoldedplastictechniqueresultsininexpensiveproduct ◇Mounting:thruholefor#6screwMou

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BR1002

SILICONBRIDGERECTIFIERS

PRV:50-1000Volts Io:10Amperes FEATURES: *Highcurrentcapability *Highsurgecurrentcapability *Highreliability *Lowreversecurrent *Lowforwardvoltagedrop *Idealforprintedcircuitboard *Pb/RoHSFree

EIC

EIC

BR1002

SiliconBridgeRectifiers8Ampsto10Amps

SiliconBridgeRectifiers8Ampsto10Amps TheplasticmaterialcarriesU/Lrecognition94V-O

EDAL

Edal Industries, Inc.

BR1002

SILICONBRIDGERECTIFIERS

FEATURES: *Highcurrentcapability *Highsurgecurrentcapability *Highreliability *Lowreversecurrent *Lowforwardvoltagedrop *Idealforprintedcircuitboard *Pb/RoHSFree

SYNSEMI

SynSemi,Inc.

BR1002

SILICONBRIDGERECTIFIERS

EIC

EIC

BR1002

SILICONBRIDGERECTIFIERS

SILICONBRIDGERECTIFIERS REVERSEVOLTAGE-50to1000Volts FORWARDCURRENT-10/15/25/35/50Amperes FEATURES ●Surgeoverload-240~500amperespeak ●Lowforwardvoltagedrop ●Mountingposition:Any ●Electricallyisolatedbase-2000Volts ●Solderable0.25FASTONte

Good-Ark

Good-Ark

BR1002

AMPSiliconBridgeRectifiers

VOLTAGE50V~1000V 10/15/25/35/50AMPSiliconBridgeRectifiers FEATURES .Surgeoverload240~400Amperespeak .Lowforwardvoltagedrop .MountingPosition:Any .Electricallyisolatedbase–2000volts .Solderable0.25”FASTONterminals .Materialsusedca

SECOS

SeCoS Halbleitertechnologie GmbH

BR1002

SiliconBridgeRectifiers

HYyueqing hongyi electronics co.,ltd

宏一乐清市宏一电子有限公司

BR1002G

GLASSPASSIVATEDBRIDGERECTIFIERS

REVERSEVOLTAGE-50to1000Volts FORWARDCURRENT-10.0Amperes FEATURES ●Surgeoverloadrating-200amperespeak ●Lowforwardvoltagedrop ●Smallsize;simpleinstallation ●Sliverplatedcopperleads ●Mountingposition:Any

HYyueqing hongyi electronics co.,ltd

宏一乐清市宏一电子有限公司

BR1002-G

SiliconBridgeRectifiers

ReverseVoltage:50to1000V ForwardCurrent:10/15/25/35/50A RoHSDevice Features -Surgeoverload-240~500Amperespeak. -Lowforwardvoltagedrop. -Electricallyisolatedbase-2000Volts. -MaterialsusedcarriesU/Lrecognition. -Solderable0.25FASTONterminals.

COMCHIPComchip Technology

典琦典琦科技股份有限公司

BR1002MSG

GlassPassivatedBridgeRectifiers

HYyueqing hongyi electronics co.,ltd

宏一乐清市宏一电子有限公司

BR1002MSG-G

GlassPassivatedBridgeRectifiers

COMCHIPComchip Technology

典琦典琦科技股份有限公司

BR1002S

SILICONBRIDGERECTIFIERS

HYyueqing hongyi electronics co.,ltd

宏一乐清市宏一电子有限公司

BR1002S

SILICONBRIDGERECTIFIER

EIC

EIC

BR1002S

SILICONBRIDGERECTIFIERS

REVERSEVOLTAGE-50to1000VoltsFORWARDCURRENT-10.0Amperes FEATURES ●Surgeoverloadrating-240amperespeak ●Lowforwardvoltagedrop ●Smallsize;simpleinstallation ●Sliverplatedcopperleads ●Mountingposition:Any

BWTECHBruckewell Technology LTD

布吕克韦尔技术布吕克韦尔技术有限公司

BR1002S

SiliconBridgeRectifiers

HYyueqing hongyi electronics co.,ltd

宏一乐清市宏一电子有限公司

详细参数

  • 型号:

    TBB1002BMTL-E

  • 制造商:

    RENESAS

  • 制造商全称:

    Renesas Technology Corp

  • 功能描述:

    Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier

供应商型号品牌批号封装库存备注价格
RENESAS
22+
原厂封装
20000
原装正品,渠道可追溯
询价
RENESAS/瑞萨
SOT363
7906200
询价
RENESAS
23+
NA
20000
公司现货原装
询价
RENESAS/瑞萨
23+
SOT-363
100586
全新原厂原装正品现货,可提供技术支持、样品免费!
询价
05+
原厂原装
18051
只做全新原装真实现货供应
询价
RENESAS
1436+
SOT363
30000
绝对原装进口现货可开增值税发票
询价
RENESAS
2016+
SOT-363
6523
房间原装进口现货假一赔十
询价
RENESAS瑞萨/HITACHI日立
2008++
SC70-6
24200
新进库存/原装
询价
RENESAS
2020+
SOT-363
6500
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
RENESAS
2020+
SOT363
35000
100%进口原装正品公司现货库存
询价
更多TBB1002BMTL-E供应商 更新时间2024-5-26 9:00:00