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APT1002RBN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=7A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

APT1002RCN

N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

POWERMOSIV™ N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

ADPOW

Advanced Power Technology

APT1002RCN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=5.5A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

APT1002RDN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=7A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ARJ-1002

GIGABITRJ45LANMAGNETIC

ABRACONAbracon Corporation

阿布雷肯

ASI1002

NPNSILICONRFPOWERTRANSISTOR

DESCRIPTION: TheASI1002isDesignedforGeneralPurposeClassCPowerAmplifierApplicationsupto1500MHz. FEATURES: •PG=12dBminat2W/1,000MHz •HermeticMicrostripPackage •Omnigold™MetalizationSystem

ASI

Advanced Semiconductor, Inc

AT-1002

HighPowerFixedAttenuators(Radiatorbuilt-in)

HighPowerFixedAttenuators(Radiatorbuilt-in) ■Features 1.SmallSizeandEconomical Berylliaisusedforthematerialoftheresistanceelementtoenabletheterminationtobeofsmallsizeandlowcost. 2.ConnectorsUsed Inthecouplingportion,theAT-1000SerieshasanSMAt

HIROSEHirose Electric Company

广濑日本广濑电机株式会社

AU-Y1002-A

CABLE28AWG,UL2725

ASSMANNASSMANN WSW COMPONENTS

ASSMANN WSW组件有限公司

AXHV1002

VCO-VoltageControlledOscillator

AXTALAdvanced XTAL Products

Advanced XTAL Products

B1002ERW

LowCost1x2Inch10WWideInputRangeDC/DCConverters

MPD

MPD (Memory Protection Devices)

B1002R

10W,5VDCInputCompact,DualOutputDC/DCConverters

MPD

MPD (Memory Protection Devices)

B1002RW

Compact1x2Inch10WWideInputRangeDC/DCConverters

MPD

MPD (Memory Protection Devices)

B1002RW

B1000RWSERIES

MPD

MPD (Memory Protection Devices)

BL1002A

COBwithmetalframe5x7dotswithcursor

BOLYMIN

?BOLYMIN INC

BMEXBP1002

rackX80-10slots-RedundantPS-Ethernetbackplane

SCHNEIDERSchneider electric

施耐德施耐德电气

BMEXBP1002H

ruggedizedrackX80-10slots-RedundantPS-Ethernetbackplane

SCHNEIDERSchneider electric

施耐德施耐德电气

BPD1002

BackplanesBPD,BPFforTSeries

bel

Bel Fuse Inc.

BR1002

SILICONBRIDGERECTIFIERS

EIC

EIC

BR1002

SILICONBRIDGERECTIFIERS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

BR1002

SILICONBRIDGERECTIFIERS

VOLTAGERANGE:50---1000VCURRENT:10.0A FEATURES ◇Ratingto1000VPRV ◇Surgeoverloadratingto200Amperespeak ◇Idealforprintedcircuitboard ◇Reliablelowcostconstructionutilizingmoldedplastictechniqueresultsininexpensiveproduct ◇LeadsolderableperMIL-STD-202metho

DSK

Diode Semiconductor Korea

详细参数

  • 型号:

    TBB1002BMTL-E

  • 制造商:

    RENESAS

  • 制造商全称:

    Renesas Technology Corp

  • 功能描述:

    Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier

供应商型号品牌批号封装库存备注价格
RENESAS
22+
原厂封装
20000
原装正品,渠道可追溯
询价
RENESAS/瑞萨
SOT363
7906200
询价
RENESAS
23+
NA
20000
公司现货原装
询价
RENESAS/瑞萨
23+
SOT-363
100586
全新原厂原装正品现货,可提供技术支持、样品免费!
询价
05+
原厂原装
18051
只做全新原装真实现货供应
询价
RENESAS
1436+
SOT363
30000
绝对原装进口现货可开增值税发票
询价
RENESAS
2016+
SOT-363
6523
房间原装进口现货假一赔十
询价
RENESAS瑞萨/HITACHI日立
2008++
SC70-6
24200
新进库存/原装
询价
RENESAS
2020+
SOT-363
6500
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
RENESAS
2020+
SOT363
35000
100%进口原装正品公司现货库存
询价
更多TBB1002BMTL-E供应商 更新时间2024-5-25 13:30:00