Specification of GaAlAs IR Emitting Diode Chip

DESCRIPTION TB9414VA is an infrared, 940 nm emitting diode in GaAlAs double hetero technology with high radiant power and high speed. Anode is the bond pad on top. GENERAL INFORMATION The datasheet is based on Vishay optoelectronics sample testing under certain predetermined and assumed con

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VishayVishay Siliconix

威世

UTC
SOP8

UTC

友顺

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UTC(友顺)
DIP-8

UTC(友顺)

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东芝
DIP16

东芝

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TOSHIBA/东芝
SSOP18

TOSHIBA/东芝

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