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6633

22(7/30)AWGTinnedCopper

ALPHAWIREAlpha Wire

阿尔法电线

6633B

6630BSeriesSingle-Output,80-100WGPIBPowerSupplies

KEYSIGHTKeysight Technologies

是德科技是德科技(中国)有限公司

AD6633

MultichannelDigitalUpconverterwithVersaCRESTCrestReductionEngine

GENERALDESCRIPTION TheAD6633isamultichannel,widebandwidthdigitalupconverter(DUC)withcrestfactorreduction(CFR)technology,whichisavailablein4-channelor6-channelversions.Itprocesses20-bitbasebandinputdataandgenerates18-bit,wideband,real,orcomplexoutputdataatu

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

IRF6633

DirectFETPowerMOSFET

Description TheIRF6633combinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayoutgeom

IRF

International Rectifier

IRF6633

RoHsCompliantContainingNoLeadandBromide

Description TheIRF6633combinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayoutgeom

IRF

International Rectifier

IRF6633APBF

LowConductionLossesandSwitchingLosses

IRF

International Rectifier

IRF6633APBF

RoHSCompliant

Description TheIRF6633APbFcombinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout

IRF

International Rectifier

IRF6633ATRPBF

DirectFETTMPowerMOSFET

Description TheIRF6633APbFcombinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout

IRF

International Rectifier

IRF6633ATRPBF

LowConductionLossesandSwitchingLosses

IRF

International Rectifier

IRF6633PBF

DirectFETPowerMOSFET

Description TheIRF6633PbFcombinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayoutg

IRF

International Rectifier

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