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M62213FP

GENERALPURPOSEHIGHSPEEDPWMCONTROLIC

DESCRIPTION M62213P/FPisdesignedasageneralpurposehigh-speedPWMcontrolIC. Thissmall10pinpackagecontainsmanyfunctionandprotectioncircuitsallowingsimplerperipheralcircuitsandcompactsetdesign. ThisICcanoperatehighspeedswitching(700kHzMax)withhighspeedPWMcomp

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

M62213P

GeneralPurposeHighSpeedPWMControlIC

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

M62213P

GENERALPURPOSEHIGHSPEEDPWMCONTROLIC

DESCRIPTION M62213P/FPisdesignedasageneralpurposehigh-speedPWMcontrolIC. Thissmall10pinpackagecontainsmanyfunctionandprotectioncircuitsallowingsimplerperipheralcircuitsandcompactsetdesign. ThisICcanoperatehighspeedswitching(700kHzMax)withhighspeedPWMcomp

MitsubishiMitsubishi Electric Semiconductor

三菱电机三菱电机株式会社

TB62213AFG

BiCDIntegratedCircuitSiliconMonolithic

PHASE-incontrolledBipolarSteppingMotorDriverIC Features •Capableofcontrolling1bipolarsteppingmotor. •BiCDprocessintegratedmonolithicIC. •PWMcontrolledconstant-currentdrive. •AllowsFullStep,HalfStepand1/4Stepexcitations. •OutputstagelowonresistancebyaB

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TB62213AFNG

BiCDIntegratedCircuitSiliconMonolithic

PHASE-incontrolledBipolarSteppingMotorDriverIC Features •Capableofcontrolling1bipolarsteppingmotor. •BiCDprocessintegratedmonolithicIC. •PWMcontrolledconstant-currentdrive. •AllowsFullStep,HalfStepand1/4Stepexcitations. •OutputstagelowonresistancebyaB

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TB62213AFTG

BiCDIntegratedCircuitSiliconMonolithic

PHASE-incontrolledBipolarSteppingMotorDriverIC Features •Capableofcontrolling1bipolarsteppingmotor. •BiCDprocessintegratedmonolithicIC. •PWMcontrolledconstant-currentdrive. •AllowsFullStep,HalfStepand1/4Stepexcitations. •OutputstagelowonresistancebyaB

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TB62213AHQ

PHASE-incontrolledBipolarSteppingMotorDriverIC

Features •Capableofcontrolling1bipolarsteppingmotor. •BiCDprocessintegratedmonolithicIC. •PWMcontrolledconstant-currentdrive. •AllowsFullStep,HalfStepand1/4Stepexcitations. •OutputstagelowonresistancebyaBiCDprocess •Highvoltageandcurrent(Forspecificati

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

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