TIP102

DARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS

PlasticMedium−PowerComplementarySiliconTransistors Designedforgeneral−purposeamplifierandlow−speedswitchingapplications. Features •HighDCCurrentGain−hFE=2500(Typ)@IC=4.0Adc •Collector−EmitterSustainingVoltage−@30mAdc VCEO(sus)=60Vdc(Min)−

TIP102

DARLINGTON8AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS

DARLINGTON8AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60–80–100VOLTS 80WATTS ...designedforgeneral–purposeamplifierandlow–speedswitchingapplications. •HighDCCurrentGain—hFE=2500(Typ)@IC=4.0Adc •Collector–EmitterSustainingVoltage—@30mAdc

TIP102

POWERTRANSISTORS(8A,60-100V,80W)

8AmpereDARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS60-100VOLTS80WATTS TIP100,TIP101,TIP102-->NPN TIP105,TIP106,TIP107-->PNP

TIP102

NPNSILICONPOWERDARLINGTONS

●DesignedforComplementaryUsewithTIP105,TIP106andTIP107 ●80Wat25°CCaseTemperature ●8AContinuousCollectorCurrent ●MaximumVCE(sat)of2.5VatIC=8A

TIP102

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

DESCRIPTION TheTIP102isasiliconEpitaxial-BaseNPNpowertransistorinmonolithicDarlingtonconfigurationmountedinTO-220plasticpackage.Itisintentedforuseinpowerlinearandswitchingapplications. ThecomplementaryPNPtypeisTIP107. AlsoTIP105isaPNPtype. ■STMicroelectro

TIP102

PowerDarlingtonsforLinearandSwitchingApplications

TIP100,101,102NPNPLASTICPOWERTRANSISTORS TIP105,106,107PNPPLASTICPOWERTRANSISTORS PowerDarlingtonsforLinearandSwitchingApplications

TIP102

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors

•MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •HighDCCurrentGain:hFE=1000@Vce=4V,Ic=3A(Min.) •Collector-EmitterSustainingVoltage •LowCollector-EmitterSaturationVoltage •IndustrialUse •ComplementarytoTIP105/106/107

TIP102

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

TIP102

PlasticMedium?뭁owerComplementarySiliconTransistors

TIP102

PLASTICPOWERTRANSISTORS

PLASTICPOWERTRANSISTORS IntendedforuseinLinearSwitchingApplications