TSML1020

HighPowerInfraredEmittingDiode,940nm,GaAlAs,MQW

DESCRIPTION TSML1000isaninfrared,940nmemittingdiodeinGaAlAs multiquantumwell(MQW)technologywithhighradiant powerandhighspeedmoldedinaclear,untintedplastic package(withlens)forsurfacemounting(SMD). FEATURES •Packagetype:surface-mount •Packageform:GW,RG

TTB1020B

BipolarTransistorsSiliconPNPTriple-DiffusedType

Applications •High-CurrentSwitching •HammerDrivers Features (1)HighDCcurrentgain:hFE=2000(min)(VCE=-3V,IC=-3A) (2)Lowcollector-emittersaturationvoltage:VCE(sat)=-1.5V(max)(IC=-3A,IB=-6mA) (3)ComplementarytoTTD1415B

TZ1020A

CrystalUnitSMD3.2x2.525.00MHz

Features: SurfaceMountHermeticPackage ExcellentReliabilityPerformance GoodFrequencyPerturbationandStabilityovertemperature UltraMiniaturePackage DescriptionandApplications: Surfacemount3.2mmx2.5mmcrystalunitforuseinwirelesscommunicationsdevices, especiallyforan

TZA1020

Pre-amplifiersforCD-RWsystems

TZA1020A

Pre-amplifiersforCD-RWsystems

TZA1020HP

Pre-amplifiersforCD-RWsystems

TZA1020HP/A

Pre-amplifiersforCD-RWsystems

TZA1020HPSLASHA

Pre-amplifiersforCD-RWsystems

U1020G

10.0AmpereSurfaceMountDualCommonCathodeUltraFastRecoveryRectifiers

U1020RG

10.0AmpereSurfaceMountDualCommonAnodeUltraFastRecoveryRectifiers