首页 >TAS2110EVM>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
L-BANDPADRIVERAMPLIFIER DESCRIPTION TheµPG2106TBandµPG2110TBareGaAsMMICforPAdriveramplifierwithvariablegainfunctionwhichweredevelopedforPDC(PersonalDigitalCellularinJapan)andanotherL-bandapplication.Thedevicecanoperatewith3.0V,havingthehighgainandlowdistortion.TheµPG2106TBis | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
L-BANDPADRIVERAMPLIFIER DESCRIPTION NECsUPG2110TBisaGaAsMMICforPAdriveramplifierswithvariablegainfunctionswhichwasdevelopedforL-bandapplications.Thedevicecanoperatewith3.0V,havinghighgainandlowdistortion. FEATURES •LOWVOLTAGEOPERATION:VDD1=VDD2=3.0V, fRF=1850to1910MHz | CEL California Eastern Labs | CEL | ||
LINEARINTEGRATEDCIRCUIT | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | UTC | ||
Finger-shapedheatsinkTO-126 | ASSMANN ASSMANN WSW COMPONENTS | ASSMANN | ||
Lowvoltage,Lowpower,짹1HighdetectaccuracyCMOSVoltageDetector GENERALDESCRIPTIONS TheVDAseriesarevoltagedetectorswithlowvoltage,lowpower consumptionandhighaccuracy.Theaccuracyofthedetectionvoltage isdetectedbasedonavoltagereferenceofhighaccuracythatthe temperaturecoefficientiscontrolled.Thedetectionvoltageismadein | ANASEMAnaSem Hong Kong Limited. 安纳森半导体安纳森半导体香港有限公司 | ANASEM | ||
Lowvoltage,Lowpower,짹1HighdetectaccuracyCMOSVoltageDetector GENERALDESCRIPTIONS TheVDAseriesarevoltagedetectorswithlowvoltage,lowpower consumptionandhighaccuracy.Theaccuracyofthedetectionvoltage isdetectedbasedonavoltagereferenceofhighaccuracythatthe temperaturecoefficientiscontrolled.Thedetectionvoltageismadein | ANASEMAnaSem Hong Kong Limited. 安纳森半导体安纳森半导体香港有限公司 | ANASEM | ||
N-ChannelEnhancement-ModeVerticalDMOSFETs AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedan | SUTEX Supertex, Inc | SUTEX | ||
N-ChannelEnhancement-ModeVerticalDMOSFETs AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedan | SUTEX Supertex, Inc | SUTEX | ||
P-ChannelEnhancement-ModeVerticalDMOSFET GeneralDescription TheSupertexVP2110isanenhancement-mode(normallyoff)transistorthatutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistors,andthehi | SUTEX Supertex, Inc | SUTEX | ||
P-ChannelEnhancement-ModeVerticalDMOSFETs AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpeda | SUTEX Supertex, Inc | SUTEX |
产品属性
- 产品编号：
TAS2110EVM
- 制造商：
Texas Instruments
- 类别：
开发板，套件，编程器 > 评估和演示板及套件
- 包装：
盒
- 类型：
音频
- 功能：
音频处理
- 使用的 IC/零件：
TAS2110
- 所含物品：
板
- 描述：
TAS2110 EVALUATION MODULE
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
24+ |
N/A |
48000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
TI(德州仪器) |
2024+ |
N/A |
500000 |
诚信服务,绝对原装原盘 |
询价 | ||
TI |
24+ |
32-VQFN-HR |
5000 |
询价 | |||
TI |
23+ |
VQFN-32 |
15000 |
原装进口、正品保障、合作持久 |
询价 | ||
TI(德州仪器) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
TI |
22+ |
NA |
500000 |
万三科技,秉承原装,购芯无忧 |
询价 | ||
TI(德州仪器) |
24+/25+ |
10000 |
原装正品现货库存价优 |
询价 | |||
80000 |
询价 | ||||||
TI(德州仪器) |
2022+ |
8000 |
原厂原装,假一罚十 |
询价 | |||
TI/德州仪器 |
21+ |
VQFN-HR-32 |
63880 |
本公司只售原装 支持实单 |
询价 |
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