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UNR2110

SiliconPNPepitaxialplanartype

SiliconPNPepitaxialplanartype Fordigitalcircuits ■Features •Costscanbereducedthroughdownsizingoftheequipmentand reductionofthenumberofparts •Minitypepackageallowingeasyautomaticinsertionthroughtape packingandmagazinepacking

PanasonicPanasonic Semiconductor

松下松下电器

UPG2110TB

L-BANDPADRIVERAMPLIFIER

DESCRIPTION TheµPG2106TBandµPG2110TBareGaAsMMICforPAdriveramplifierwithvariablegainfunctionwhichweredevelopedforPDC(PersonalDigitalCellularinJapan)andanotherL-bandapplication.Thedevicecanoperatewith3.0V,havingthehighgainandlowdistortion.TheµPG2106TBis

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

UPG2110TB

L-BANDPADRIVERAMPLIFIER

DESCRIPTION NECsUPG2110TBisaGaAsMMICforPAdriveramplifierswithvariablegainfunctionswhichwasdevelopedforL-bandapplications.Thedevicecanoperatewith3.0V,havinghighgainandlowdistortion. FEATURES •LOWVOLTAGEOPERATION:VDD1=VDD2=3.0V, fRF=1850to1910MHz

CEL

California Eastern Labs

UTCM2110

LINEARINTEGRATEDCIRCUIT

UTCUnisonic Technologies

友顺友顺科技股份有限公司

V2110B

Finger-shapedheatsinkTO-126

ASSMANN

ASSMANN WSW COMPONENTS

VDA2110CTA

Lowvoltage,Lowpower,짹1HighdetectaccuracyCMOSVoltageDetector

GENERALDESCRIPTIONS TheVDAseriesarevoltagedetectorswithlowvoltage,lowpower consumptionandhighaccuracy.Theaccuracyofthedetectionvoltage isdetectedbasedonavoltagereferenceofhighaccuracythatthe temperaturecoefficientiscontrolled.Thedetectionvoltageismadein

ANASEMAnaSem Hong Kong Limited.

安纳森半导体安纳森半导体香港有限公司

VDA2110NTA

Lowvoltage,Lowpower,짹1HighdetectaccuracyCMOSVoltageDetector

GENERALDESCRIPTIONS TheVDAseriesarevoltagedetectorswithlowvoltage,lowpower consumptionandhighaccuracy.Theaccuracyofthedetectionvoltage isdetectedbasedonavoltagereferenceofhighaccuracythatthe temperaturecoefficientiscontrolled.Thedetectionvoltageismadein

ANASEMAnaSem Hong Kong Limited.

安纳森半导体安纳森半导体香港有限公司

VN2110

N-ChannelEnhancement-ModeVerticalDMOSFETs

AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedan

SUTEX

Supertex, Inc

VN2110ND

N-ChannelEnhancement-ModeVerticalDMOSFETs

AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedan

SUTEX

Supertex, Inc

VP2110

P-ChannelEnhancement-ModeVerticalDMOSFET

GeneralDescription TheSupertexVP2110isanenhancement-mode(normallyoff)transistorthatutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistors,andthehi

SUTEX

Supertex, Inc

供应商型号品牌批号封装库存备注价格
TI
24+
VQFN-HR|32
70230
免费送样原盒原包现货一手渠道联系
询价
TI德州仪器
22+
24000
原装正品现货,实单可谈,量大价优
询价
TI
24+
VQFN32
12800
强势渠道订货 7-10天
询价
TI/德州仪器
23+
32-VQFN
3100
原装正品代理渠道价格优势
询价
NA
23+
NA
26094
10年以上分销经验原装进口正品,做服务型企业
询价
TI
22+
NA
500000
万三科技,秉承原装,购芯无忧
询价
TI(德州仪器)
24+/25+
10000
原装正品现货库存价优
询价
80000
询价
TI(德州仪器)
2022+
8000
原厂原装,假一罚十
询价
TI/德州仪器
25+
VQFN-HR-32
8880
原装认准芯泽盛世!
询价
更多TAS2110供应商 更新时间2025-7-25 17:06:00