HIGH SPEED COMPARATOR

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TOSHIBA Transistor Silicon NPN Epitaxial Type

High Speed Switching Applications DC-DC Converter Applications • High DC current gain : hFE = 400 to 1000 (IC = 0.2 A) • Low collector-emitter saturation : VCE (sat) = 0.12 V (max) • High-speed switching : tf = 25 ns (typ.)

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Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

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MOSFETs Silicon N-channel MOS (U-MOS??H)

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