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TPC8124

FieldEffectTransistorSiliconPChannelMOSType(U-MOS??

LithiumIonBatteryApplications PowerManagementSwitchApplications •Smallfootprintduetosmallandthinpackage •Lowdrain-sourceON-resistance:RDS(ON)=6.1mΩ(typ.) •Lowleakagecurrent:IDSS=−10μA(max)(VDS=−40V) •Enhancementmode:Vth=−0.8to−2.0V(VDS=−10V,ID=

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TPC8124

P-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

TPC8124

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

UGD8124AG

HighVoltagerectifiersHochspannungs-gleichrichter

HighVoltagerectifiers

IXYS

IXYS Corporation

UTC8124

LINERINTERFRATEDCIRCUIT

UTCUnisonic Technologies

友顺友顺科技股份有限公司

VSC8124

TargetSpecification

GeneralDescription TheVSC8124isafourchannel,2.5Gb/sdatare-timerforcleaningupdatadownstreamofopticallinksorcrosspointswitches.Serialdataatthe2.5Gb/srateisindependentlyre-timedonfourchannels,anddrivendifferentiallybyCMLdrivers.There-timingfunctiononeach

VITESSE

Vitesse Semiconductor Corporation

供应商型号品牌批号封装库存备注价格