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TA8119P

STEREO HEADPHONE AMPLIFIER (3V USE)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TPC8119

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TPC8119

FieldEffectTransistorSiliconPChannelMOSType(U-MOSV)

Lithium-IonBatteryApplications LoadswitchApplications NotebookPCApplications •Smallfootprintduetoasmallandthinpackage •Lowdrain-sourceON-resistance:RDS(ON)=10mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=24S(typ.) •Lowleakagecurrent:IDSS

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

UPC8119T

BIPOLARANALOGINTEGRATEDCIRCUITS

FEATURES •Recommendedoperatingfrequency:f=100MHzto1.92GHz •Supplyvoltage:VCC=2.7to3.3V •Lowcurrentconsumption:ICC=11mATYP.@VCC=3.0V •Gaincontrolvoltage:VAGC=0.6to2.4V(recommended) •Twotypesofgaincontrol:μPC8119T;VAGCupvs.Gaindown(Forw

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

UPC8119T

-15dBmINPUT,VARIABLEGAINAMPLIFIERSILICONMMICFORTRANSMITTERAGCOFDIGITALCELLULARTELEPHONE

DESCRIPTION TheµPC8130TAandµPC8131TAaresiliconmonolithicintegratedcircuitsdesignedasvariablegainamplifier.Dueto800MHzto1.5GHzoperation,theseICsaresuitableforRFtransmitterAGCstageofdigitalcellulartelephone.TheseICsarelowerdistortionthanconventionalµPC8119T

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

UPC8119T

VARIABLEGAINAMPLIFIERSILICONMMICFORTRANSMITTERAGCOFDIGITALCELLULARTELEPHONE

DESCRIPTION TheµPC8119TandµPC8120Taresiliconmonolithicintegratedcircuitsdesignedasvariablegainamplifier.Dueto100MHzto1.9GHzoperation,theseICsaresuitableforRFtransmitterAGCstageofdigitalcellulartelephone.Twotypesofgaincontrolletuserschooseinaccordancewi

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

UPC8119T

NECsVARIABLEGAINAMPLIFIER

CEL

California Eastern Labs

UPC8119T

1.9GHzAGCAMPLIFIER

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

UTC8119

LINERINTERFRATEDCIRCUIT

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UZ8119

POWERZENERS

DESCRIPTION Onewattzenerdiodes,hermeticallysealedinglass. FEATURES •HighSurgeRatings •AQuartertheSizeofConventional1WattZeners •ImpervioustoMoisture

MicrosemiMicrosemi Corporation

美高森美美高森美公司

详细参数

  • 型号:

    TA8119P

  • 制造商:

    TOSHIBA

  • 制造商全称:

    Toshiba Semiconductor

  • 功能描述:

    STEREO HEADPHONE AMPLIFIER(3V USE)

供应商型号品牌批号封装库存备注价格
TOS
24+
DIP
26200
原装现货,诚信经营!
询价
TOSHIBA
24+
DIP16
3000
自己现货
询价
TOSHIBA
23+
DIP16
5000
原装正品,假一罚十
询价
TOSHIBA
24+
DIP
4897
绝对原装!现货热卖!
询价
TOS
24+
DIP
726
原装现货假一罚十
询价
TOSH
04+
DIP
2450
全新原装进口自己库存优势
询价
TOS
24+
DIP
6232
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
TOS
05+
原厂原装
91
只做全新原装真实现货供应
询价
TOSHIBA
2020+
DIP
6000
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
TOSHIBA
1738+
DIP16
8529
科恒伟业!只做原装正品,假一赔十!
询价
更多TA8119P供应商 更新时间2025-7-23 15:39:00