STEREO HEADPHONE AMPLIFIER (3V USE)

文件：402.2 Kbytes 页数：10 Pages

TOSHIBA

东芝

STEREO HEADPHONE AMPLIFIER (3V USE)

Toshiba

东芝

Field Effect Transistor Silicon P Channel MOS Type (U-MOSV)

Lithium-Ion Battery Applications Load switch Applications Notebook PC Applications • Small footprint due to a small and thin package • Low drain-source ON-resistance: RDS (ON)= 10 mΩ(typ.) • High forward transfer admittance: |Yfs| = 24 S (typ.) • Low leakage current: IDSS

文件：206.95 Kbytes 页数：7 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

-15 dBm INPUT, VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE

DESCRIPTION The µPC8130TA and µPC8131TA are silicon monolithic integrated circuits designed as variable gain amplifier. Due to 800 MHz to 1.5 GHz operation, these ICs are suitable for RF transmitter AGC stage of digital cellular telephone. These ICs are lower distortion than conventional µPC8119T

文件：371.8 Kbytes 页数：40 Pages

NEC

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