| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
HiPerFETPowerMOSFETs HiPerFETPowerMOSFETs N-ChannelEnhancementMode AvalancheRated,Highdv/dt Features •Internationalstandardpackages •LowRDS(on) •RatedforunclampedInductiveloadswitching(UIS) •MoldingepoxiesmeetUL94V-0flammabilityclassification Advantages •Easytomount •Spacesav | IXYS IXYS Corporation | IXYS | ||
N-ChannelEnhancementModePowerMosfet | FOSTERShenzhen Foster Semiconductor Co., Ltd. 福斯特半导体深圳市福斯特半导体有限公司 | FOSTER | ||
N-ChannelEnhancementModePowerMosfet | FOSTERShenzhen Foster Semiconductor Co., Ltd. 福斯特半导体深圳市福斯特半导体有限公司 | FOSTER | ||
N-ChannelEnhancementModePowerMOSFET | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
N-ChannelEnhancementModePowerMOSFET | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
HiPerFETMOSFETISOPLUS220TM HiPerFET™MOSFETISOPLUS220™ ElectricallyIsolatedBackSurface N-ChannelEnhancementMode Highdv/dt,Lowtrr,HDMOS™Family Features •SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation •Lowdraintot | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=60A@TC=25℃ ·DrainSourceVoltage :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=33mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=60A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=33mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HiPerFETPowerMOSFETs HiPerFETPowerMOSFETs N-ChannelEnhancementMode AvalancheRated,Highdv/dt Features •Internationalstandardpackages •LowRDS(on) •RatedforunclampedInductiveloadswitching(UIS) •MoldingepoxiesmeetUL94V-0flammabilityclassification Advantages •Easytomount •Spacesav | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=60A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=38mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HiPerRFTMPowerMOSFETs HiPerRFTMPowerMOSFETs F-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRgHighdV/dt,Lowtrr Features •RFcapableMOSFETs •Doublemetalprocessforlowgateresistance •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance- | IXYS IXYS Corporation | IXYS | ||
HiPerFETPowerMOSFETs HiPerFETPowerMOSFETs N-ChannelEnhancementMode AvalancheRated,Highdv/dt Features •Internationalstandardpackages •LowRDS(on) •RatedforunclampedInductiveloadswitching(UIS) •MoldingepoxiesmeetUL94V-0flammabilityclassification Advantages •Easytomount •Spacesav | IXYS IXYS Corporation | IXYS | ||
HiPerRFPowerMOSFETF-Class:MegaHertzSwitching | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelEnhancementModeForPDPDriversAvalancheRated N-ChannelEnhancementModeForPDPDrivers AvalancheRated Features HighCurrentHandlingCapability 175°COperatingTemperature AvalancheRated FastIntrinsicRectifier LowRDS(on) Applications DC-DCConverters BatteryChargers Switch-ModeandResonant-Mode | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelEnhancementModeForPDPDriversAvalancheRated N-ChannelEnhancementModeForPDPDrivers AvalancheRated Features HighCurrentHandlingCapability 175°COperatingTemperature AvalancheRated FastIntrinsicRectifier LowRDS(on) Applications DC-DCConverters BatteryChargers Switch-ModeandResonant-Mode | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelEnhancementModeForPDPDriversAvalancheRated N-ChannelEnhancementModeForPDPDrivers AvalancheRated Features HighCurrentHandlingCapability 175°COperatingTemperature AvalancheRated FastIntrinsicRectifier LowRDS(on) Applications DC-DCConverters BatteryChargers Switch-ModeandResonant-Mode | IXYS IXYS Corporation | IXYS |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS/艾赛斯 |
2022+ |
800 |
全新原装 货期两周 |
询价 | |||
IXYS |
NA |
8560 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
ROHM |
2016+ |
SIP10P |
6523 |
只做原装正品现货!或订货! |
询价 | ||
MOT |
ZIP10 |
3000 |
自己现货 |
询价 | |||
ROHM |
22+ |
SIP |
3000 |
原装正品,支持实单 |
询价 | ||
TOSHIBA |
2023+ |
ZIP |
4865 |
全新原厂原装产品、公司现货销售 |
询价 | ||
TA |
21+ |
QFP |
9096 |
原装现货假一赔十 |
询价 | ||
TA |
22+ |
QFP |
28600 |
只做原装正品现货假一赔十一级代理 |
询价 | ||
TA |
QFP |
90000 |
公司只做集团化配单-有更多数量-免费送样-原包装正品 |
询价 | |||
台湾圜达 |
21+ |
SMD |
35000 |
航宇科工半导体-央企合格优秀供方 |
询价 |
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